Modulating Self-Heating Effects in GaN HEMTs Using Slant Field Plate

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Zheng-Lai Tang;Yang Shen;Bing-Yang Cao
{"title":"Modulating Self-Heating Effects in GaN HEMTs Using Slant Field Plate","authors":"Zheng-Lai Tang;Yang Shen;Bing-Yang Cao","doi":"10.1109/TED.2025.3546594","DOIUrl":null,"url":null,"abstract":"The self-heating effect in electronic devices can lead to localized hotspots, adversely affecting their performance and reliability, particularly in high-power-density devices like gallium nitride (GaN) high-electron-mobility transistors (HEMTs). In addition to enhancing heat dissipation, reducing heat generation through structural design can effectively modulate self-heating effects. This study investigates the modulation effect of an asymmetric slant field plate (FP) on self-heating in GaN HEMTs, using electro-thermal simulations based on the drift-diffusion model. Additionally, Monte Carlo (MC) simulations are employed to examine the influence of the slant FP on phonon ballistic transport under non-Fourier heat conduction. Results show that the slant FP smooths the potential distribution and reduces the maximum electric field intensity in the channel, thereby decreasing the maximum heat generation density. With a slant angle of 6° and an FP length of 1200 nm, the maximum heat generation density is reduced by 50%, and the hotspot temperature rise is lowered by 16%. By adjusting the characteristic size of the heat source, the slant FP further reduces near-junction thermal resistance, achieving the hotspot temperature reduction of over 30% under non-Fourier heat conduction. This work aims to deepen the understanding of self-heating effects in HEMT devices and explore a potential thermal management strategy.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1907-1911"},"PeriodicalIF":2.9000,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10919462/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

The self-heating effect in electronic devices can lead to localized hotspots, adversely affecting their performance and reliability, particularly in high-power-density devices like gallium nitride (GaN) high-electron-mobility transistors (HEMTs). In addition to enhancing heat dissipation, reducing heat generation through structural design can effectively modulate self-heating effects. This study investigates the modulation effect of an asymmetric slant field plate (FP) on self-heating in GaN HEMTs, using electro-thermal simulations based on the drift-diffusion model. Additionally, Monte Carlo (MC) simulations are employed to examine the influence of the slant FP on phonon ballistic transport under non-Fourier heat conduction. Results show that the slant FP smooths the potential distribution and reduces the maximum electric field intensity in the channel, thereby decreasing the maximum heat generation density. With a slant angle of 6° and an FP length of 1200 nm, the maximum heat generation density is reduced by 50%, and the hotspot temperature rise is lowered by 16%. By adjusting the characteristic size of the heat source, the slant FP further reduces near-junction thermal resistance, achieving the hotspot temperature reduction of over 30% under non-Fourier heat conduction. This work aims to deepen the understanding of self-heating effects in HEMT devices and explore a potential thermal management strategy.
利用斜场板调节 GaN HEMT 中的自加热效应
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信