{"title":"Analysis and Characterization Approach of Variation Behavior for Dopant-Segregated Tunnel FETs With Self-Aligned Drain Underlap","authors":"Kaifeng Wang;Qianqian Huang;Ru Huang","doi":"10.1109/TED.2025.3540763","DOIUrl":null,"url":null,"abstract":"The novel dopant-segregated tunnel FET (DS-TFET) has recently been proposed and experimentally demonstrated as a promising low-power device on standard CMOS baseline platform. In this article, for high-volume production, we evaluate the variation behavior of DS-TFET and carefully study its physical mechanism. Different from conventional TFET, the doping gradient of tunnel junction (TDG) and the electrical length of drain underlap region (<inline-formula> <tex-math>${L}_{\\text {und}}$ </tex-math></inline-formula>) are found to be the two dominant random variation sources, and the additional variation of <inline-formula> <tex-math>${L}_{\\text {und}}$ </tex-math></inline-formula> results in the asymmetrical variation between <inline-formula> <tex-math>$\\sigma {I}$ </tex-math></inline-formula><sc>on</small> and <inline-formula> <tex-math>$\\sigma {I}$ </tex-math></inline-formula><sc>off</small>. Based on the measured and modeled I–V and C–V characteristics, a device-level characterization approach is further developed to electrically extract <inline-formula> <tex-math>${L}_{\\text {und}}$ </tex-math></inline-formula> and the main variation sources, which is also verified through technology computer aided design (TCAD) simulation. The method of this work paves the way for the development of the variation-aware compact model and the DS-TFET-based circuit analysis, promoting the development of ultralow-power TFET-CMOS hybrid platform.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"2051-2058"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10892199/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The novel dopant-segregated tunnel FET (DS-TFET) has recently been proposed and experimentally demonstrated as a promising low-power device on standard CMOS baseline platform. In this article, for high-volume production, we evaluate the variation behavior of DS-TFET and carefully study its physical mechanism. Different from conventional TFET, the doping gradient of tunnel junction (TDG) and the electrical length of drain underlap region (${L}_{\text {und}}$ ) are found to be the two dominant random variation sources, and the additional variation of ${L}_{\text {und}}$ results in the asymmetrical variation between $\sigma {I}$ on and $\sigma {I}$ off. Based on the measured and modeled I–V and C–V characteristics, a device-level characterization approach is further developed to electrically extract ${L}_{\text {und}}$ and the main variation sources, which is also verified through technology computer aided design (TCAD) simulation. The method of this work paves the way for the development of the variation-aware compact model and the DS-TFET-based circuit analysis, promoting the development of ultralow-power TFET-CMOS hybrid platform.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.