Comprehensive Optimization Strategies for InSnZnO Grade-Channel Thin-Film Transistors via Atomic Layer Deposition

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-03-06 DOI:10.1109/TED.2025.3544998

Yu Zhang;Binbin Luo;Jiong Liu;Bojia Chen;Xinming Wu;Xuefeng Wu;Rongxu Bai;David W. Zhang;Qingqing Sun;Shen Hu;Li Ji

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引用次数: 0

Abstract

The amorphous oxide semiconductors (AOSs) have been widely explored for thin-film transistors (TFTs). However, a tradeoff persists between high field-effect mobility and low threshold voltage attributed to percolation conduction, necessitating comprehensive optimization. Herein, the grade-channel InSnZnO (ITZO) TFTs with enhanced performance synthesized by atomic layer deposition (ALD) were investigated by the stoichio-metric and structure optimization in channel. The relationship between stoichiometric of channel and electrical transport property has been investigated in single-layer-channel ITZO TFTs. Then, we investigated the influence of vertical stoichiometric distribution on performance enhancement in bilayer-channel and grade-channel ITZO TFTs. The ITZO TFTs based on grade channel exhibit superior characteristics, including remarkable mobility of 65.88 cm2/V

$\cdot $

s, fantastic on-/off-ratio of

$10^{{10}}$

, and excellent subthreshold swing (SS) of 72.85 mV/dec, which weaken the tradeoff. Furthermore, the positive bias stress (PBS) instability test indicates that the grade-channel structure also enhances PBS stability beyond mobility improvement. These findings are promising for the performance enhancement of high-mobility AOS TFTs.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.