Study of a Lead-Free Perovskite MA3Bi2Br9 Narrowband Photodetector for Blue-Light Detection

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-02-14 DOI:10.1109/TED.2025.3538740

Zhi-Cheng Wu;Jia Liu;Xiu-Dong Lu;Jiang Wang;Zhi-Yu Huang;Zhi-Guo Zhu;Cong-Cong Wang;Yan Wang;Feng-Xia Liang;Lin-Bao Luo

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引用次数: 0

Abstract

Narrowband photodetection is crucial for various applications, including machine vision, bioimaging, and environmental monitoring. While lead-based perovskites offer promising properties, their toxicity and instability limit their practical applications. Here, we report a high-performance narrowband photodetector (PD) based on lead-free perovskite MA3Bi2Br9 single crystal. By employing the charge collection narrowing (CCN) mechanism, we realized a device exhibiting a pronounced peak response centered at 470 nm, characterized by a narrow full-width at half-maximum (FWHM) of merely 24 nm. The detector exhibits a high responsivity of 0.102 mA/W and a specific detectivity of

$2.21\times 10^{8}$

Jones at 15 V bias. Additionally, it demonstrates a high spectral rejection ratio (SRR) of 34 for 470-nm light relative to 510-nm light. To quantify blue-light hazards, we established a numerical relationship between weighted irradiance and photocurrent. Our results highlight the potential of lead-free perovskite-based PDs for practical applications in narrowband detection and environmental monitoring.

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无铅钙钛矿MA3Bi2Br9窄带蓝光探测器的研究

窄带光探测对于各种应用至关重要，包括机器视觉、生物成像和环境监测。虽然铅基钙钛矿具有很好的性能，但它们的毒性和不稳定性限制了它们的实际应用。本文报道了一种基于无铅钙钛矿MA3Bi2Br9单晶的高性能窄带光电探测器（PD）。通过采用电荷收集变窄（CCN）机制，我们实现了一种具有明显的以470 nm为中心的峰值响应的器件，其特点是半峰全宽仅为24 nm。该探测器在15 V偏置下具有0.102 mA/W的高响应率和2.21\ × 10^{8}$ Jones的比探测率。此外，它在470 nm光下的光谱抑制比（SRR）为34，相对于510 nm光。为了量化蓝光危害，我们建立了加权辐照度与光电流之间的数值关系。我们的研究结果突出了无铅钙钛矿基pd在窄带探测和环境监测方面的实际应用潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.