Gold Mask-Assisted Fabrication of Contamination-Free Monolayer MoS2 Transistors

Abstract

Atomically thin MoS2 is a promising material for field-effect transistors (FETs) and electronic devices. However, traditional photolithographic processes introduce polymeric photoresist contamination to 2-D materials, leading to a large uncertainty in their electrical property. In this work, we demonstrate a novel fabrication method using gold as a mask for patterning and etching, which protects 2-D materials from contamination of polymeric photoresists. This technique enables the fabrication of clean monolayer MoS2 transistors with Ohmic contacts. MoS2 devices was mass-produced using both traditional photo-lithography (TPL) and gold mask lithography (GML). Statistics (~200 devices) shows that MoS2 devices produced by TPL vary in electrical properties by three orders of magnitude, while those fabricated by GML are highly reproducible with the conductivity variance within one order of magnitude.