Suhyeong Choi;Carlo Gilardi;Paul Gutwin;Robert M. Radway;Tathagata Srimani;Subhasish Mitra
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引用次数: 0
Abstract
This article presents Omni 3D—a 3-D-stacked device architecture that is naturally enabled by back-end-of-line (BEOL)-compatible transistors. Omni 3D interleaves metal layers with 3-D-stacked nFETs and pFETs. Thus, the signal and power routing layers have fine-grained, all-sided access to the field-effect transistor (FET) active regions maximizing 3-D standard cell design flexibility. This is in sharp contrast to approaches such as back-side power delivery network (BSPDN), complementary FETs (CFETs), and stacked FETs. Importantly, the routing flexibility of Omni 3D is enabled by double-side metal and interleaved metal (IM) for inter- and intracell routing, respectively. In this work, we explore Omni 3D variants (e.g., both with and without the IM) and optimize these variants using a virtual-source BEOL-FET compact model. We establish a physical design flow that efficiently uses the double-side routing in Omni 3D and perform a thorough design technology co-optimization (DTCO) of Omni 3D device architecture on several design points. From our design flow, we project ${2.0}\times $ improvement in the energy-delay product (EDP) and ${1.5}\times $ reduction in area on average across our benchmark circuits compared with the state-of-the-art CFETs with BSPDN.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.