Physics-Based Compact Modeling of Quantum Confinement and Quasi-Ballistic Transport in Ultra-Scaled GAAFETs

Abstract

A physics-based compact model is developed for ultra-scaled gate-all-around field-effect transistors (GAAFETs), addressing increasingly prominent physical effects: quantum confinement, quasi-ballistic transport, and short channel effects (SCEs). The model employs approximate analytical solutions to the fundamental physical equations, mimicking true device physics while maintaining computational efficiency. In addition to predicting terminal characteristics, it accurately computes subband energies, quantum centroid, quasi-ballistic transmission coefficient, and electrostatic scaling length. Through these internal physical quantities, the model serves not merely as a concise representation of device behaviors but also reveals fundamental physical insights. The model’s verified consistency with TCAD simulations and experimental data confirms its accuracy across a wide range of bias conditions and GAAFET dimensions, while also highlighting the physical mechanisms captured by the model for leading-edge technology nodes.