Multiwindow Implantation Method in Vertical Hall Devices for High Sensitivity

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-03-11 DOI:10.1109/TED.2025.3546187

Guiqiang Zheng;Nannan Cheng;Yichen Li;Jiawei Dou;Qingyin Zhong;Jie Ma;Lanlan Yang;Xiaofeng Sun;Dejin Wang;Sen Zhang;Yongjia Li;Long Zhang;Siyang Liu;Weifeng Sun

引用次数: 0

Abstract

A novel vertical Hall device (VHD), featuring a waved boundary magnetic-sensitive well, is proposed for the first time in this article. By applying multiwindow implantation (MWI) method in 0.15-

$\mu $

m bipolar-CMOS–DMOS (BCD) platform, nonuniform doping profile in lateral and vertical directions is realized and the path of bias current is changed subsequently. The current path with long route and low resistance in the proposed VHD increases the ratio of longitudinal current and a current related sensitivity (

${S} _{I}$

) of 178 V/AT is achieved, which is 49.6% improved compared with the standard VHD. The proposed VHD provides a new solution for the design of high-sensitivity Hall device.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.