WSe₂ and CuO Blend-Based Broadband Photodetector With Poly-TPD (HTL) and PCBM (ETL)

Abstract

This article reports an Al/[6,6]-phenyl-C 61-butyric acid methyl ester (PCBM)/WSe2: CuO/Poly-TPD/ITO-coated polyethylene terephthalate (PET) structure-based broadband photodetector. The fabricated device incorporates Poly-TPD and PCBM as a hole transport layer (HTL) and electron transport layer (ETL), while the WSe2 and CuO blend is sandwiched in between HTL and ETL to work as an active layer. All the solutions were prepared by the dispersion methodology and were deposited through a spin coater. Finally, electrodes (Al contacts) were deposited on PCBM (ETL) with the thermal evaporation technique. The suggested photodetector exhibits maximum responsivity ${R}_{S}$ (A/W) of 14.32, 11.43, and 2.1 A/W at 300 nm (UV), 450 nm (visible), and 1200 nm [near infrared range (NIR)] at -0.75-V bias. The incorporation of ETL and HTL shows the promising photograph response of the device and paves the way for the optoelectronic application of the proposed photodetector.