A Novel MEMS Microwave Power Detection Chip Based on Multibeam Structure

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Haoyu Sun;Yuxiang Liang;Yuzhao Wu;Debo Wang
{"title":"A Novel MEMS Microwave Power Detection Chip Based on Multibeam Structure","authors":"Haoyu Sun;Yuxiang Liang;Yuzhao Wu;Debo Wang","doi":"10.1109/TED.2025.3543471","DOIUrl":null,"url":null,"abstract":"In order to effectively improve the sensitivity performance of micro-electromechanical system (MEMS) microwave power detection chips, a MEMS microwave power detection chip based on a multibeam structure is proposed in this work. A four-beam parallel structure is designed, and the output capacitance of the chip is increased, thereby enhancing its sensitivity. The risk of collapse associated with excessively long single beams is also mitigated, reducing the occurrence of adhesion. The sensitivity and microwave performance of the chip have been theoretically studied, and the chip has been fabricated and measured. Measured results show that in the range from 8 to 12 GHz, the results of <inline-formula> <tex-math>${S}_{{11}}$ </tex-math></inline-formula> range from −18.5 to −15.3 dB, while the theoretical results range from −26.8 to −25.2 dB. The reflection ratio deviation of input power is 1.2%. The measured results of <inline-formula> <tex-math>${S}_{{21}}$ </tex-math></inline-formula> range from −3.6 to −3.4 dB, while the optimized theoretical results range from −3.42 to −2.27 dB, with an error of 1.8% between them. The measured sensitivity of the chip is 72.76 fF/W, while the theoretical value of the model is 73.5 fF/W, resulting in an error of only 1.01%. Compared to existing structures, the four-beam parallel structure achieves a sensitivity improvement of up to 38.9 times at its maximum and 1.4 times at its minimum. Therefore, the MEMS microwave power detection chip based on a multibeam structure proposed in this work provides a valuable reference for improving sensitivity performance.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"2006-2012"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10904301/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

In order to effectively improve the sensitivity performance of micro-electromechanical system (MEMS) microwave power detection chips, a MEMS microwave power detection chip based on a multibeam structure is proposed in this work. A four-beam parallel structure is designed, and the output capacitance of the chip is increased, thereby enhancing its sensitivity. The risk of collapse associated with excessively long single beams is also mitigated, reducing the occurrence of adhesion. The sensitivity and microwave performance of the chip have been theoretically studied, and the chip has been fabricated and measured. Measured results show that in the range from 8 to 12 GHz, the results of ${S}_{{11}}$ range from −18.5 to −15.3 dB, while the theoretical results range from −26.8 to −25.2 dB. The reflection ratio deviation of input power is 1.2%. The measured results of ${S}_{{21}}$ range from −3.6 to −3.4 dB, while the optimized theoretical results range from −3.42 to −2.27 dB, with an error of 1.8% between them. The measured sensitivity of the chip is 72.76 fF/W, while the theoretical value of the model is 73.5 fF/W, resulting in an error of only 1.01%. Compared to existing structures, the four-beam parallel structure achieves a sensitivity improvement of up to 38.9 times at its maximum and 1.4 times at its minimum. Therefore, the MEMS microwave power detection chip based on a multibeam structure proposed in this work provides a valuable reference for improving sensitivity performance.
求助全文
约1分钟内获得全文 求助全文
来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信