{"title":"A Novel MEMS Microwave Power Detection Chip Based on Multibeam Structure","authors":"Haoyu Sun;Yuxiang Liang;Yuzhao Wu;Debo Wang","doi":"10.1109/TED.2025.3543471","DOIUrl":null,"url":null,"abstract":"In order to effectively improve the sensitivity performance of micro-electromechanical system (MEMS) microwave power detection chips, a MEMS microwave power detection chip based on a multibeam structure is proposed in this work. A four-beam parallel structure is designed, and the output capacitance of the chip is increased, thereby enhancing its sensitivity. The risk of collapse associated with excessively long single beams is also mitigated, reducing the occurrence of adhesion. The sensitivity and microwave performance of the chip have been theoretically studied, and the chip has been fabricated and measured. Measured results show that in the range from 8 to 12 GHz, the results of <inline-formula> <tex-math>${S}_{{11}}$ </tex-math></inline-formula> range from −18.5 to −15.3 dB, while the theoretical results range from −26.8 to −25.2 dB. The reflection ratio deviation of input power is 1.2%. The measured results of <inline-formula> <tex-math>${S}_{{21}}$ </tex-math></inline-formula> range from −3.6 to −3.4 dB, while the optimized theoretical results range from −3.42 to −2.27 dB, with an error of 1.8% between them. The measured sensitivity of the chip is 72.76 fF/W, while the theoretical value of the model is 73.5 fF/W, resulting in an error of only 1.01%. Compared to existing structures, the four-beam parallel structure achieves a sensitivity improvement of up to 38.9 times at its maximum and 1.4 times at its minimum. Therefore, the MEMS microwave power detection chip based on a multibeam structure proposed in this work provides a valuable reference for improving sensitivity performance.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"2006-2012"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10904301/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In order to effectively improve the sensitivity performance of micro-electromechanical system (MEMS) microwave power detection chips, a MEMS microwave power detection chip based on a multibeam structure is proposed in this work. A four-beam parallel structure is designed, and the output capacitance of the chip is increased, thereby enhancing its sensitivity. The risk of collapse associated with excessively long single beams is also mitigated, reducing the occurrence of adhesion. The sensitivity and microwave performance of the chip have been theoretically studied, and the chip has been fabricated and measured. Measured results show that in the range from 8 to 12 GHz, the results of ${S}_{{11}}$ range from −18.5 to −15.3 dB, while the theoretical results range from −26.8 to −25.2 dB. The reflection ratio deviation of input power is 1.2%. The measured results of ${S}_{{21}}$ range from −3.6 to −3.4 dB, while the optimized theoretical results range from −3.42 to −2.27 dB, with an error of 1.8% between them. The measured sensitivity of the chip is 72.76 fF/W, while the theoretical value of the model is 73.5 fF/W, resulting in an error of only 1.01%. Compared to existing structures, the four-beam parallel structure achieves a sensitivity improvement of up to 38.9 times at its maximum and 1.4 times at its minimum. Therefore, the MEMS microwave power detection chip based on a multibeam structure proposed in this work provides a valuable reference for improving sensitivity performance.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.