Electrical Analysis of Atomic Layer Deposited Thin HfO2 and HfO2/Ta2O5-Based Memristive Devices

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-02-13 DOI:10.1109/TED.2025.3539256

Sanjay Kumar;Deepika Yadav;Rahul Ramesh;Spyros Stathopoulos;Andreas Tsiamis;Themis Prodromakis

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Abstract

Here, we report the detailed fabrication and electrical analysis of atomic layer deposited single (i.e., HfO2) and bilayer (i.e., HfO2/Ta2O5)-based memristive devices. The bilayer devices show stable retention properties

$\gt 10^{{3}}$

s with an improved on/off ratio. Moreover, the bilayer devices also exhibit higher change in the device resistance (25%–30%) as compared to resistance change (~12%) in single-layer devices under the same electrical programming scheme. The least values of coefficient of variability (

${C} _{\text {V}}$

) in cycle-to-cycle (C2C) in the device resistance states are 0.19% low-resistance state (LRS) and 0.28% high-resistance state (HRS) for single-layer device, while in the case of bilayer devices, these values are 1.10% (LRS) and 0.29% (HRS). Furthermore, the impedance spectroscopy (EIS) analysis reveals that the switching mechanism is more dominant due to the change in the device resistance rather than the device capacitance. Therefore, this work opens a new way to further explore the ac analysis of memristive devices and their potential applications in various fields.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.