A Comparative Analysis of Statistical Modeling and Machine Learning Techniques for Predicting the Lifetime of Light Emitting Diodes From Accelerated Life Testing
IF 2.9 2区 工程技术Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Reem Alsharabi;Leen Almalki;Fidaa Abed;M. A. Majid;Omar A. Kittaneh
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引用次数: 0
Abstract
This work uses multivariable life stress models to revisit the catastrophic failure of high-brightness blue light emitting diodes (LEDs) under accelerated life testing (ALT). The stress factors, current, temperature, relative humidity (RH), and their interactions are considered in lifetime studies. First, we show that the lognormal distribution fits the experimental data much better than the Weibull distribution using the standard Kolmogorov-Smirnov test. Furthermore, the best life-stress relationship is the Intel model rather than the peck model used by Nogueira et al. (2016). Additionally, based on the accelerated data, machine learning (ML) techniques are employed to predict the lifetime of LEDs under normal operating conditions. However, the study highlights the limitations of ML in accurately predicting lifetime.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.