Forming-Free Resistive Switching Behavior in Pt/NiFe2O4/SrRuO3 Devices: Simulation and Experimental Insights Into Oxygen Vacancy Engineering

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-02-11 DOI:10.1109/TED.2025.3537950

Rui Su;Ying Yang;Yuheng Deng;Bangda Zhou;Runqing Zhang;Weiming Cheng;Huajun Sun;Jing Ping Xu;Xiangshui Miao

引用次数: 0

Abstract

NiFe2O4 (NFO) thin films have been explored for resistive switching applications, yet high forming voltages remain a challenge. This work presents Pt/NFO/SrRuO3 devices featuring a forming-free switching behavior enabled by engineered oxygen vacancies, forming conductive filaments pre-emptively. Fabricated at 650 °C, these devices demonstrate a high on/off ratio of 160 and excellent stability. COMSOL simulations elucidate the impact of filament dynamics on resistive switching, offering critical insights into the process of fracture and formation of conductive filaments. This study provides a reference for the fabrication of forming-free, low-power NFO memristors.

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Pt/NiFe2O4/SrRuO3器件的无形成电阻开关行为：氧空位工程的模拟和实验见解

NiFe2O4 （NFO）薄膜已被探索用于电阻开关应用，但高形成电压仍然是一个挑战。这项工作提出了Pt/NFO/SrRuO3器件，其特点是通过工程氧空位实现无形成开关行为，先发制人地形成导电丝。这些器件在650°C下制造，具有160的高开/关比和出色的稳定性。COMSOL模拟阐明了丝动力学对电阻开关的影响，为导电丝的断裂和形成过程提供了重要的见解。该研究为制备无成形、低功率NFO忆阻器提供了参考。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.