Forming-Free Resistive Switching Behavior in Pt/NiFe2O4/SrRuO3 Devices: Simulation and Experimental Insights Into Oxygen Vacancy Engineering

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-02-11 DOI:10.1109/TED.2025.3537950

Rui Su;Ying Yang;Yuheng Deng;Bangda Zhou;Runqing Zhang;Weiming Cheng;Huajun Sun;Jing Ping Xu;Xiangshui Miao

引用次数: 0

Abstract

NiFe2O4 (NFO) thin films have been explored for resistive switching applications, yet high forming voltages remain a challenge. This work presents Pt/NFO/SrRuO3 devices featuring a forming-free switching behavior enabled by engineered oxygen vacancies, forming conductive filaments pre-emptively. Fabricated at 650 °C, these devices demonstrate a high on/off ratio of 160 and excellent stability. COMSOL simulations elucidate the impact of filament dynamics on resistive switching, offering critical insights into the process of fracture and formation of conductive filaments. This study provides a reference for the fabrication of forming-free, low-power NFO memristors.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.