Low-Resistance and Thermally Stable Ohmic Contacts on n-GeSn Using Ni and Ti Metallization

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-03-05 DOI:10.1109/TED.2025.3542347

Nicolas Coudurier;Andrea Quintero;Robin Pellerin;Maël Robin;Jean-Michel Hartmann;Vincent Reboud;Philippe Rodriguez

{"title":"Low-Resistance and Thermally Stable Ohmic Contacts on n-GeSn Using Ni and Ti Metallization","authors":"Nicolas Coudurier;Andrea Quintero;Robin Pellerin;Maël Robin;Jean-Michel Hartmann;Vincent Reboud;Philippe Rodriguez","doi":"10.1109/TED.2025.3542347","DOIUrl":null,"url":null,"abstract":"The development of suitable contacts for n-doped GeSn is a critical challenge to fully realize the potential of GeSn-based devices. Here, we have used transfer length method (TLM) measurements to investigate the contact properties of n-doped GeSn films with 6% of Sn after different types of metallization (with Ni, Ni0.9Pt0.1, and Ti). We also quantified the impact of different surface precleaning methods on contact formation. We successfully achieved ohmic contacts for all metallizations and measured contact resistivities as low as <inline-formula> <tex-math>$10^{-{5}}~\\Omega \\cdot $ </tex-math></inline-formula>cm2. Ni-based contacts showed stability up to <inline-formula> <tex-math>$350~^{\\circ }$ </tex-math></inline-formula>C, while Ti-based contacts exhibited superior thermal stability (at least on the time scale of contact formation annealing), maintaining performance up to <inline-formula> <tex-math>$400~^{\\circ }$ </tex-math></inline-formula>C. While Ti has been used to contact p-doped GeSn films, this work represents the first exploration of its applicability to n-doped films.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"2065-2072"},"PeriodicalIF":2.9000,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10913968/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

The development of suitable contacts for n-doped GeSn is a critical challenge to fully realize the potential of GeSn-based devices. Here, we have used transfer length method (TLM) measurements to investigate the contact properties of n-doped GeSn films with 6% of Sn after different types of metallization (with Ni, Ni0.9Pt0.1, and Ti). We also quantified the impact of different surface precleaning methods on contact formation. We successfully achieved ohmic contacts for all metallizations and measured contact resistivities as low as

$10^{-{5}}~\Omega \cdot $

cm2. Ni-based contacts showed stability up to

$350~^{\circ }$

C, while Ti-based contacts exhibited superior thermal stability (at least on the time scale of contact formation annealing), maintaining performance up to

$400~^{\circ }$

C. While Ti has been used to contact p-doped GeSn films, this work represents the first exploration of its applicability to n-doped films.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.