{"title":"Drain Current Modeling of Antiambipolar TFTs in Subthreshold and Above-Threshold Regimes","authors":"Hongyu He;Xinnan Lin;Shengdong Zhang","doi":"10.1109/TED.2025.3546179","DOIUrl":null,"url":null,"abstract":"The drain current modeling of antiambipolar thin film transistors (TFTs) in subthreshold and above-threshold regimes is presented. The drain current expressions of the n-type and p-type unipolar TFTs are extended to describe the electron current and hole current for antiambipolar TFTs, respectively. Applying the rule “smaller than the smallest” with the drain-source voltage-dependent empirical parameter, the drain current model for the antiambipolar TFTs is developed. The model is implemented in the circuit simulator using the Verilog-A programming language. A ternary inverter, which consists of antiambipolar TFT, p-type unipolar TFT, and n-type unipolar TFTs, is demonstrated.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1822-1827"},"PeriodicalIF":2.9000,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10918670/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The drain current modeling of antiambipolar thin film transistors (TFTs) in subthreshold and above-threshold regimes is presented. The drain current expressions of the n-type and p-type unipolar TFTs are extended to describe the electron current and hole current for antiambipolar TFTs, respectively. Applying the rule “smaller than the smallest” with the drain-source voltage-dependent empirical parameter, the drain current model for the antiambipolar TFTs is developed. The model is implemented in the circuit simulator using the Verilog-A programming language. A ternary inverter, which consists of antiambipolar TFT, p-type unipolar TFT, and n-type unipolar TFTs, is demonstrated.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.