Drain Current Modeling of Antiambipolar TFTs in Subthreshold and Above-Threshold Regimes

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Hongyu He;Xinnan Lin;Shengdong Zhang
{"title":"Drain Current Modeling of Antiambipolar TFTs in Subthreshold and Above-Threshold Regimes","authors":"Hongyu He;Xinnan Lin;Shengdong Zhang","doi":"10.1109/TED.2025.3546179","DOIUrl":null,"url":null,"abstract":"The drain current modeling of antiambipolar thin film transistors (TFTs) in subthreshold and above-threshold regimes is presented. The drain current expressions of the n-type and p-type unipolar TFTs are extended to describe the electron current and hole current for antiambipolar TFTs, respectively. Applying the rule “smaller than the smallest” with the drain-source voltage-dependent empirical parameter, the drain current model for the antiambipolar TFTs is developed. The model is implemented in the circuit simulator using the Verilog-A programming language. A ternary inverter, which consists of antiambipolar TFT, p-type unipolar TFT, and n-type unipolar TFTs, is demonstrated.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1822-1827"},"PeriodicalIF":2.9000,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10918670/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

The drain current modeling of antiambipolar thin film transistors (TFTs) in subthreshold and above-threshold regimes is presented. The drain current expressions of the n-type and p-type unipolar TFTs are extended to describe the electron current and hole current for antiambipolar TFTs, respectively. Applying the rule “smaller than the smallest” with the drain-source voltage-dependent empirical parameter, the drain current model for the antiambipolar TFTs is developed. The model is implemented in the circuit simulator using the Verilog-A programming language. A ternary inverter, which consists of antiambipolar TFT, p-type unipolar TFT, and n-type unipolar TFTs, is demonstrated.
阈下和阈上条件下反双极性tft的漏极电流模拟
提出了反双极性薄膜晶体管在亚阈值和高于阈值状态下的漏极电流模型。将n型和p型单极tft的漏极电流表达式扩展为分别描述反双极tft的电子电流和空穴电流。利用漏极-源极电压相关经验参数的“小于最小”原则,建立了反双极性TFTs的漏极电流模型。该模型采用Verilog-A编程语言在电路模拟器中实现。演示了一种由反双极性TFT、p型单极TFT和n型单极TFT组成的三元逆变器。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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