{"title":"Boosting Performance of AlGaN-Based Ultraviolet-C Light-Emitting Diodes via High-Quality AlN Template","authors":"Xu Liu;Shengjun Zhou;Zhenxing Lv;Bin Tang;Hansong Geng;Zhefu Liao;Jingjing Jiang;Ziqi Zhang;Shengli Qi;Sheng Liu","doi":"10.1109/TED.2025.3538815","DOIUrl":null,"url":null,"abstract":"Ultraviolet-C light-emitting diodes (UVC LEDs) have exhibited promising future on the pursuit of sustainable and environmental-friendly germicidal irradiation source for the next generation. Nevertheless, owing to the large lattice mismatch between the AlN buffer template and sapphire substrate, the current AlGaN-based UVC LEDs are subjected to severe compressive strain and high dislocation density. Here we propose a paradigm to achieve high-quality AlN buffer template via the nucleation layer (NL) modification, growth mode regulation, and indium (In) doping modulation. Consequently, a defect-reduced, strain-controlled, and atomically flatten AlN film is achieved on the flat sapphire substrate (FSS). Furthermore, a remarkable enhancement on electroluminescence performance was observed in our UVC LED via using the proposed AlN buffer template. It is noted that our UVC LED presents a remarkable improvement on the external quantum efficiency (EQE), which is almost 90% greater than that of its referred UVC LED grown on the conventional AlN buffer template. Our work is able to supply a new horizon in the development of the excellent UVC light sources for biomedical testing, water/air purification, and another relevant fields.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1833-1838"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10880473/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Ultraviolet-C light-emitting diodes (UVC LEDs) have exhibited promising future on the pursuit of sustainable and environmental-friendly germicidal irradiation source for the next generation. Nevertheless, owing to the large lattice mismatch between the AlN buffer template and sapphire substrate, the current AlGaN-based UVC LEDs are subjected to severe compressive strain and high dislocation density. Here we propose a paradigm to achieve high-quality AlN buffer template via the nucleation layer (NL) modification, growth mode regulation, and indium (In) doping modulation. Consequently, a defect-reduced, strain-controlled, and atomically flatten AlN film is achieved on the flat sapphire substrate (FSS). Furthermore, a remarkable enhancement on electroluminescence performance was observed in our UVC LED via using the proposed AlN buffer template. It is noted that our UVC LED presents a remarkable improvement on the external quantum efficiency (EQE), which is almost 90% greater than that of its referred UVC LED grown on the conventional AlN buffer template. Our work is able to supply a new horizon in the development of the excellent UVC light sources for biomedical testing, water/air purification, and another relevant fields.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.