Boosting Performance of AlGaN-Based Ultraviolet-C Light-Emitting Diodes via High-Quality AlN Template

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Xu Liu;Shengjun Zhou;Zhenxing Lv;Bin Tang;Hansong Geng;Zhefu Liao;Jingjing Jiang;Ziqi Zhang;Shengli Qi;Sheng Liu
{"title":"Boosting Performance of AlGaN-Based Ultraviolet-C Light-Emitting Diodes via High-Quality AlN Template","authors":"Xu Liu;Shengjun Zhou;Zhenxing Lv;Bin Tang;Hansong Geng;Zhefu Liao;Jingjing Jiang;Ziqi Zhang;Shengli Qi;Sheng Liu","doi":"10.1109/TED.2025.3538815","DOIUrl":null,"url":null,"abstract":"Ultraviolet-C light-emitting diodes (UVC LEDs) have exhibited promising future on the pursuit of sustainable and environmental-friendly germicidal irradiation source for the next generation. Nevertheless, owing to the large lattice mismatch between the AlN buffer template and sapphire substrate, the current AlGaN-based UVC LEDs are subjected to severe compressive strain and high dislocation density. Here we propose a paradigm to achieve high-quality AlN buffer template via the nucleation layer (NL) modification, growth mode regulation, and indium (In) doping modulation. Consequently, a defect-reduced, strain-controlled, and atomically flatten AlN film is achieved on the flat sapphire substrate (FSS). Furthermore, a remarkable enhancement on electroluminescence performance was observed in our UVC LED via using the proposed AlN buffer template. It is noted that our UVC LED presents a remarkable improvement on the external quantum efficiency (EQE), which is almost 90% greater than that of its referred UVC LED grown on the conventional AlN buffer template. Our work is able to supply a new horizon in the development of the excellent UVC light sources for biomedical testing, water/air purification, and another relevant fields.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1833-1838"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10880473/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Ultraviolet-C light-emitting diodes (UVC LEDs) have exhibited promising future on the pursuit of sustainable and environmental-friendly germicidal irradiation source for the next generation. Nevertheless, owing to the large lattice mismatch between the AlN buffer template and sapphire substrate, the current AlGaN-based UVC LEDs are subjected to severe compressive strain and high dislocation density. Here we propose a paradigm to achieve high-quality AlN buffer template via the nucleation layer (NL) modification, growth mode regulation, and indium (In) doping modulation. Consequently, a defect-reduced, strain-controlled, and atomically flatten AlN film is achieved on the flat sapphire substrate (FSS). Furthermore, a remarkable enhancement on electroluminescence performance was observed in our UVC LED via using the proposed AlN buffer template. It is noted that our UVC LED presents a remarkable improvement on the external quantum efficiency (EQE), which is almost 90% greater than that of its referred UVC LED grown on the conventional AlN buffer template. Our work is able to supply a new horizon in the development of the excellent UVC light sources for biomedical testing, water/air purification, and another relevant fields.
求助全文
约1分钟内获得全文 求助全文
来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信