Effects of Residual Stress on the Ferroelectric Properties of Al0.8Sc0.2N Films Sandwiched Between Pt or W Electrodes

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-03-04 DOI:10.1109/TED.2025.3545391

Xiaoxi Li;Yuan Fang;Bochang Li;Jiuren Zhou;Zhifan Wu;Cizhe Fang;Xiangyu Zeng;Siying Zheng;Yue Hao;Yan Liu;Genquan Han

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引用次数: 0

Abstract

In this work, the impacts of the residual stress on the structural and ferroelectric properties of Al0.8Sc0.2N films clamped with different metal electrodes (Pt and W) were investigated. The Pt/Al

$_{\mathbf {0.8}}$

Sc0.2N/Pt capacitors exhibited enhanced ferroelectric performance, with coercive fields (

${E} _{\text {c}}$

) reduced by 0.2 MV/cm, leakage currents reduced by one order of magnitude and stable polarization switching across frequencies. These improvements are attributed to better crystallographic orientation and larger grain sizes driven by tensile stress. In contrast, W/Al0.8Sc0.2N/W capacitors showed larger leakage currents, higher

${E} _{\text {c}}$

, and a greater susceptibility to breakdown. Moreover, the W samples showed diminished retention characteristics, with a 50% loss in nonswitched polarization at

$10^{{4}}$

s compared to the Pt counterparts. These issues were related to the compressive stress between W and Al0.8Sc0.2N, resulting in more defects that impeded polarization switching. The findings suggest that the engineering of stress through electrode selection is essential for optimizing the performance of AlScN-based ferroelectric devices.

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残余应力对夹在Pt或W电极间Al0.8Sc0.2N薄膜铁电性能的影响

本文研究了残余应力对不同金属电极（Pt和W）夹固Al0.8Sc0.2N薄膜结构和铁电性能的影响。Pt/Al $_{\mathbf {0.8}}$ Sc0.2N/Pt电容器表现出增强的铁电性能，矫顽力（${E} _{\text {c}}$）降低了0.2 MV/cm，漏电流降低了一个数量级，各频率极化切换稳定。这些改进是由于更好的晶体取向和更大的晶粒尺寸由拉应力驱动。相比之下，W/Al0.8Sc0.2N/W电容器的泄漏电流更大，${E} _{\text {c}}$更高，并且更容易击穿。此外，W样品的保留特性减弱，与Pt样品相比，在$10^{{4}}$ s的非开关极化损失了50%。这些问题与W和Al0.8Sc0.2N之间的压应力有关，导致更多的缺陷阻碍了极化开关。研究结果表明，通过电极选择的应力工程对于优化基于alscn的铁电器件的性能至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.