Multibit N-Type and P-Type Fe-GAAFETs Using HfO₂/ZrO₂ Superlattice Dielectric and SiGe/Si Superlattice Channel With Record Low Voltage, Large Memory Window, High Speed, and Reliability for High Density 1T NVM Applications

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-02-24 DOI:10.1109/TED.2025.3540768

Yi-Ju Yao;Tsai-Jung Lin;Chen-You Wei;Kai-Ting Huang;Bo-Xu Chen;Yung-Teng Fang;Heng-Jia Chang;Yu-Min Fu;Guang-Li Luo;Fu-Ju Hou;Yung-Chun Wu

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引用次数: 0

Abstract

This article presents novel approach to achieving record low voltage, large memory window (MW), high speed, and endurance for high-density 1T nonvolatile memory (NVM) with N-type and P-type Fe-gate-all around field-effect transistors (GAAFETs) utilizing HfO2/ZrO2 superlattice (SL) dielectric and SiGe/Si SL channel for multibit memory. The proposed multibit Fe-GAAFETs exhibit a rapid switching speed of 100 ns and a substantial MW of approximately 2.5 V with an interfacial layer (IL) of SiO2. Notably, P-type devices demonstrate write voltage at only 2 V, showcasing endurance exceeding 107 cycles for each state, and a data retention time surpassing 105 s, linearly extrapolated ten years without performance decrease and well-separated intermediate states. Additionally, the quantum well effect of the SiGe/Si SL channel is analyzed. These findings emphasize the feasibility of achieving low operating voltage for high-density 1T NVM applications.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.