L. Pichon;L. Le Brizoual;H. Djeha;E. Ferrucho Alvarez;L. Claudepierre;J. L. Autran
{"title":"Theoretical Model of Transient Current in CMOS Inverter Under IR Laser Pulse Responsible of Bitflip in FDSOI Technology","authors":"L. Pichon;L. Le Brizoual;H. Djeha;E. Ferrucho Alvarez;L. Claudepierre;J. L. Autran","doi":"10.1109/TED.2025.3538002","DOIUrl":null,"url":null,"abstract":"A theoretical model of the induced transient photocurrent in MOS transistor under laser illumination is proposed to predict an estimation of the incident power surface density of the laser required to create a bitflip. This model based on the physical effect of the laser interaction with the semiconductor material (silicon) takes into account the laser characteristics, the physical properties of the silicon, and the geometrical and technological parameters. The results highlight the volume effects, with a higher photocurrent level due to a higher total electron/hole pair generation for a thicker active layer, making the structures more sensitive to fault injection by pulsed IR laser, particularly for conventional bulk CMOS technologies and for FDSOI technologies based on FINFETs. This theoretical model combined with electrical model based on phototransistor is a good predictive tool in complements with TCAD simulations for studies of vulnerability analysis in advanced FDSOI silicon technologies and enables parametric analysis of physical phenomena related to the technology, in order to anticipate experimental studies of the vulnerability by laser fault injection of complex electronic systems.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1919-1925"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10885532/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A theoretical model of the induced transient photocurrent in MOS transistor under laser illumination is proposed to predict an estimation of the incident power surface density of the laser required to create a bitflip. This model based on the physical effect of the laser interaction with the semiconductor material (silicon) takes into account the laser characteristics, the physical properties of the silicon, and the geometrical and technological parameters. The results highlight the volume effects, with a higher photocurrent level due to a higher total electron/hole pair generation for a thicker active layer, making the structures more sensitive to fault injection by pulsed IR laser, particularly for conventional bulk CMOS technologies and for FDSOI technologies based on FINFETs. This theoretical model combined with electrical model based on phototransistor is a good predictive tool in complements with TCAD simulations for studies of vulnerability analysis in advanced FDSOI silicon technologies and enables parametric analysis of physical phenomena related to the technology, in order to anticipate experimental studies of the vulnerability by laser fault injection of complex electronic systems.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.