Demonstration of High-Performance 0.17-mΩ⋅cm²/800-V 4H-SiC Super-Junction Schottky Diodes via Multiepitaxial Growth and Channeled Implantation Techniques
IF 2.9 2区 工程技术Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
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引用次数: 0
Abstract
This article demonstrates the fabrication of high-performance 4H-silicon carbide (SiC) super-junction (SJ) Schottky diodes utilizing channeled implantation and double epitaxial growth. The diodes, featuring a $4.5-\mu $ m-thick drift region and a $4-\mu $ m-thick SJ structure, underwent characterization encompassing both material and electrical attributes. After double epitaxial growth, the epitaxial layer showcased a maximum stress of 25.9 MPa. The full-width at half-maximum (FWHM) analysis underscored the exceptional quality of the 4H-SiC crystals across the entire wafer surface (FWHM < 25 arcsec), paralleled by atomic force microscopy (AFM) outcomes revealing an epitaxial layer with excellent smoothness (${R}_{\text {q}} \lt 0.35$ nm). Devices fabricated on these high-quality wafers exhibited consistent performance and superior yield. Electrical property distributions revealed a breakdown voltage (BV) of 800 V alongside a specific on-resistance (${R}_{\text {on},\text {sp}})$ of 0.17 m$\Omega \cdot $ cm2 and a record Baliga figure of merit (BFOM) value of 3.76 GW/cm2 (800 V), subtracting the substrate resistance, exceeding the 1-D theoretical limit of 4H-SiC successfully. Moreover, it is inferred that the channeled implantation technology is an attractive process for fabricating SiC SJ devices.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.