Sigmoid Probabilistic Bits Using SiOₓ Threshold Switching Devices for Probabilistic Computing

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-02-19 DOI:10.1109/TED.2025.3540029

Hyeonsik Choi;Jihyun Kim;Jaehyun Moon;Seung-Youl Kang;Jiyong Woo

{"title":"Sigmoid Probabilistic Bits Using SiOₓ Threshold Switching Devices for Probabilistic Computing","authors":"Hyeonsik Choi;Jihyun Kim;Jaehyun Moon;Seung-Youl Kang;Jiyong Woo","doi":"10.1109/TED.2025.3540029","DOIUrl":null,"url":null,"abstract":"We present probabilistic bits (p-bits) implemented using a simple and fabrication-friendly Ti/SiOx/Ti stack for probabilistic computing. Sputter-deposited thin SiOx films (<10> <tex-math>${V} _{\\text {out}}$ </tex-math></inline-formula>) oscillations in response to a given input voltage (<inline-formula> <tex-math>${V} _{\\text {in}}$ </tex-math></inline-formula>) pulse. When a chemically reactive Ti scavenging layer is introduced, nonuniform TS properties are observed, resulting in switching voltage (or resistance) variability and unexpected oscillation failures. Consequently, <inline-formula> <tex-math>${V} _{\\mathbf {out}}$ </tex-math></inline-formula> oscillations begin to be detected in the form of random spikes, emulating the probability of representing data as “1” (P1). Notably, we demonstrate that when the SiOx layer is sandwiched between Ti scavengers at both interfaces, the value of <inline-formula> <tex-math>${P} _{{1}}$ </tex-math></inline-formula> can be controlled between 0 and 1 in an inversely proportional relationship to <inline-formula> <tex-math>${V} _{\\mathbf {in}}$ </tex-math></inline-formula>. This sigmoid <inline-formula> <tex-math>${P} _{{1}}$ </tex-math></inline-formula> curve derived from Ti/SiOx/Ti p-bits plays a crucial role in executing simulated annealing (SA) algorithms. This capability is validated through MATLAB simulations, where the approach is applied to solve vehicle routing problems (VRPs) by identifying optimal solutions.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1738-1744"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10892292/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

We present probabilistic bits (p-bits) implemented using a simple and fabrication-friendly Ti/SiOx/Ti stack for probabilistic computing. Sputter-deposited thin SiOx films (<10> ${V} _{\text {out}}$ ) oscillations in response to a given input voltage (

${V} _{\text {in}}$

) pulse. When a chemically reactive Ti scavenging layer is introduced, nonuniform TS properties are observed, resulting in switching voltage (or resistance) variability and unexpected oscillation failures. Consequently,

${V} _{\mathbf {out}}$

oscillations begin to be detected in the form of random spikes, emulating the probability of representing data as “1” (P1). Notably, we demonstrate that when the SiOx layer is sandwiched between Ti scavengers at both interfaces, the value of

${P} _{{1}}$

can be controlled between 0 and 1 in an inversely proportional relationship to

${V} _{\mathbf {in}}$

. This sigmoid

${P} _{{1}}$

curve derived from Ti/SiOx/Ti p-bits plays a crucial role in executing simulated annealing (SA) algorithms. This capability is validated through MATLAB simulations, where the approach is applied to solve vehicle routing problems (VRPs) by identifying optimal solutions.

查看原文本刊更多论文

使用SiO的s型概率比特ₓ用于概率计算的阈值开关器件

我们提出了概率位（p位），使用简单且易于制造的Ti/SiOx/Ti堆栈实现概率计算。溅射沉积的SiOx薄膜（${V} _{\text {out}}$）响应给定的输入电压（${V} _{\text {in}}$）脉冲而振荡。当引入化学反应性Ti清除层时，观察到不均匀的TS特性，导致开关电压（或电阻）变化和意外的振荡失效。因此，${V} _{\mathbf {out}}$振荡开始以随机尖峰的形式被检测到，模拟将数据表示为“1”（P1）的概率。值得注意的是，我们证明了当SiOx层夹在两个接口的Ti清除剂之间时，${P} _{{1}}$的值可以控制在0和1之间，与${V} _{\mathbf {in}}$成反比关系。这条由Ti/SiOx/Ti P位导出的sigmoid ${P} _{{1}}$曲线在执行模拟退火（SA）算法中起着至关重要的作用。通过MATLAB仿真验证了这种能力，并将该方法应用于通过识别最优解来解决车辆路线问题（vrp）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.