Sigmoid Probabilistic Bits Using SiOₓ Threshold Switching Devices for Probabilistic Computing

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-02-19 DOI:10.1109/TED.2025.3540029

Hyeonsik Choi;Jihyun Kim;Jaehyun Moon;Seung-Youl Kang;Jiyong Woo

{"title":"Sigmoid Probabilistic Bits Using SiOₓ Threshold Switching Devices for Probabilistic Computing","authors":"Hyeonsik Choi;Jihyun Kim;Jaehyun Moon;Seung-Youl Kang;Jiyong Woo","doi":"10.1109/TED.2025.3540029","DOIUrl":null,"url":null,"abstract":"We present probabilistic bits (p-bits) implemented using a simple and fabrication-friendly Ti/SiOx/Ti stack for probabilistic computing. Sputter-deposited thin SiOx films (<10> <tex-math>${V} _{\\text {out}}$ </tex-math></inline-formula>) oscillations in response to a given input voltage (<inline-formula> <tex-math>${V} _{\\text {in}}$ </tex-math></inline-formula>) pulse. When a chemically reactive Ti scavenging layer is introduced, nonuniform TS properties are observed, resulting in switching voltage (or resistance) variability and unexpected oscillation failures. Consequently, <inline-formula> <tex-math>${V} _{\\mathbf {out}}$ </tex-math></inline-formula> oscillations begin to be detected in the form of random spikes, emulating the probability of representing data as “1” (P1). Notably, we demonstrate that when the SiOx layer is sandwiched between Ti scavengers at both interfaces, the value of <inline-formula> <tex-math>${P} _{{1}}$ </tex-math></inline-formula> can be controlled between 0 and 1 in an inversely proportional relationship to <inline-formula> <tex-math>${V} _{\\mathbf {in}}$ </tex-math></inline-formula>. This sigmoid <inline-formula> <tex-math>${P} _{{1}}$ </tex-math></inline-formula> curve derived from Ti/SiOx/Ti p-bits plays a crucial role in executing simulated annealing (SA) algorithms. This capability is validated through MATLAB simulations, where the approach is applied to solve vehicle routing problems (VRPs) by identifying optimal solutions.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1738-1744"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10892292/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

We present probabilistic bits (p-bits) implemented using a simple and fabrication-friendly Ti/SiOx/Ti stack for probabilistic computing. Sputter-deposited thin SiOx films (<10> ${V} _{\text {out}}$ ) oscillations in response to a given input voltage (

${V} _{\text {in}}$

) pulse. When a chemically reactive Ti scavenging layer is introduced, nonuniform TS properties are observed, resulting in switching voltage (or resistance) variability and unexpected oscillation failures. Consequently,

${V} _{\mathbf {out}}$

oscillations begin to be detected in the form of random spikes, emulating the probability of representing data as “1” (P1). Notably, we demonstrate that when the SiOx layer is sandwiched between Ti scavengers at both interfaces, the value of

${P} _{{1}}$

can be controlled between 0 and 1 in an inversely proportional relationship to

${V} _{\mathbf {in}}$

. This sigmoid

${P} _{{1}}$

curve derived from Ti/SiOx/Ti p-bits plays a crucial role in executing simulated annealing (SA) algorithms. This capability is validated through MATLAB simulations, where the approach is applied to solve vehicle routing problems (VRPs) by identifying optimal solutions.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.