Low-Frequency Noise Characterization of BEOL Metal–Insulator–Metal Capacitors

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
G. Giusi;Nishant Saini;K. Croes;I. Ciofi;G. Scandurra;C. Ciofi;D. Tierno
{"title":"Low-Frequency Noise Characterization of BEOL Metal–Insulator–Metal Capacitors","authors":"G. Giusi;Nishant Saini;K. Croes;I. Ciofi;G. Scandurra;C. Ciofi;D. Tierno","doi":"10.1109/TED.2025.3542748","DOIUrl":null,"url":null,"abstract":"Dielectrics are fundamental building blocks in both analog and digital electronic devices, serving various purposes, including insulating metal lines and interconnect levels in the back-end-of-line (BEOL). In this article, we investigate the leakage and low-frequency noise (LFN) properties of three different types of dielectrics, from the low-k organo-silicate glass (OSG3.0) and silica (SiO2) to the high-k alumina (Al2O3). Test structures are large area (up to <inline-formula> <tex-math>$200\\times 200~\\mu $ </tex-math></inline-formula>m2) metal-insulator–metal (MIM) capacitors, with TiN or TaNTa electrodes, that mimic well the BEOL architecture. In particular, to the best of our knowledge, no LFN study has been reported for OSGs, which are the most used class of dielectrics in the BEOL. From a physical side, current-voltage (I–V) characterization reveals that in all three dielectrics, the conduction is bulk dominated and assisted by traps, rather than limited by electrode injection. LFN measurements (LFNMs) show a typical 1/f current power spectral density (PSD) (<inline-formula> <tex-math>${S}_{I}$ </tex-math></inline-formula>) for all three dielectrics with a strongly bias-dependent gate noise parameter <inline-formula> <tex-math>$(\\text {GNP})\\propto {S}_{I}/{I}^{{2}}$ </tex-math></inline-formula> (I being the dc current), suggesting a highly nonuniform energy trap distribution, especially for Al2O3 devices. SiO2-based capacitors demonstrated the lowest leakage at equivalent fields and superior noise performance at comparable leakage currents. Al2O3 devices exhibited the highest leakage, while OSG3.0 samples showed the poorest noise characteristics, marked by pronounced electrical instability and nonstationary random telegraph signal (RTS) events.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1933-1938"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10906602/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Dielectrics are fundamental building blocks in both analog and digital electronic devices, serving various purposes, including insulating metal lines and interconnect levels in the back-end-of-line (BEOL). In this article, we investigate the leakage and low-frequency noise (LFN) properties of three different types of dielectrics, from the low-k organo-silicate glass (OSG3.0) and silica (SiO2) to the high-k alumina (Al2O3). Test structures are large area (up to $200\times 200~\mu $ m2) metal-insulator–metal (MIM) capacitors, with TiN or TaNTa electrodes, that mimic well the BEOL architecture. In particular, to the best of our knowledge, no LFN study has been reported for OSGs, which are the most used class of dielectrics in the BEOL. From a physical side, current-voltage (I–V) characterization reveals that in all three dielectrics, the conduction is bulk dominated and assisted by traps, rather than limited by electrode injection. LFN measurements (LFNMs) show a typical 1/f current power spectral density (PSD) ( ${S}_{I}$ ) for all three dielectrics with a strongly bias-dependent gate noise parameter $(\text {GNP})\propto {S}_{I}/{I}^{{2}}$ (I being the dc current), suggesting a highly nonuniform energy trap distribution, especially for Al2O3 devices. SiO2-based capacitors demonstrated the lowest leakage at equivalent fields and superior noise performance at comparable leakage currents. Al2O3 devices exhibited the highest leakage, while OSG3.0 samples showed the poorest noise characteristics, marked by pronounced electrical instability and nonstationary random telegraph signal (RTS) events.
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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