Design of High-Performance Dual-Channel-Layered InGaZnO Thin-Film Transistors With Different Indium Contents

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-02-11 DOI:10.1109/TED.2025.3538524

Muhpul Alip;Ablat Abliz;Da Wan

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引用次数: 0

Abstract

In this study, dual-channel-layered amorphous indium gallium zinc oxide (a-IGZO) based thin-film transistors (TFTs) with different In contents were fabricated using the RF magnetron sputtering technique to improve the performance and stability of single-layer a-IGZO TFTs. The optimum electrical performance of the dual-channel layered a-IGZO (2:1:1)/a-IGZO (1:1:1) TFT was obtained at a low

${V}_{\text {TH}}$

of 0.5 V,

${I}_{\text {on}}$

${I}_{\text {off}}$

$1\times 10^{{8}}$

, low subthreshold swing (SS) of 0.35 V/decade, high

$\mu _{\text {FE}}$

of 40.5 cm2/Vs, and best stability with small

${V}_{\text {TH}}$

shifts (1.4 and −1.2 V) under positive gate bias stress (PBS) and negative gate bias stress (NBS) test. This performance improvement, attributed to electron transfer from the a-IGZO (2:1:1) layer to the a-IGZO (1:1:1) layer, resulted in the accumulation of free carriers near at a-IGZO (2:1:1) and a-IGZO (1:1:1) interface. Thus, the charges were mainly concentrated within the barrier at the interface, improving performance (controlling

${V}_{\text {TH}}$

and

${N}_{e}$

), while maintaining high

$\mu _{\text {FE}}$

in a-IGZO (2:1:1)/a-IGZO (1:1:1) TFTs. In addition, the oxygen interstitial defects (Oi) of a-IGZO TFTs were calculated, and the inherent mechanism of stability improvement was examined. The degradation caused by Oi increased with increasing In content in a-IGZO TFTs. Further analysis showed that dual-channel layered a-IGZO (2:1:1)/a-IGZO (1:1:1) TFTs significantly reduced Oi and suppressed electron capture at the interface, resulting in enhanced device stability. Overall, the findings of this study are valuable for the advancement of dual-channel-layered a-IGZO TFTs.

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不同铟含量的高性能双通道分层InGaZnO薄膜晶体管设计

本研究采用射频磁控溅射技术制备了不同In含量的双通道层状非晶铟镓锌氧化物（a-IGZO）薄膜晶体管（TFTs），以提高单层a-IGZO薄膜晶体管的性能和稳定性。双通道分层a- igzo (2:1:1)/a- igzo (1:1:1) TFT的最佳电学性能为：${V}_{\text {TH}}$为0.5 V, ${I}_{\text {on}}$ / ${I}_{\text {off}}$为1 × 10^{{8}}$，低亚阈值摆幅（SS）为0.35 V/decade, $\mu _{\text {FE}}$为40.5 cm2/Vs, ${V}_{\text {TH}}$的小位移（1.4和- 1.2 V）在正栅极偏置应力（PBS）和负栅极偏置应力（NBS）测试下的最佳稳定性。由于电子从a-IGZO（2:1:1）层转移到a-IGZO（1:1:1）层，导致自由载流子在a-IGZO（2:1:1）和a-IGZO（1:1:1）界面附近积累。因此，电荷主要集中在界面的势垒内，提高了性能（控制了${V}_{\text {TH}}$和${N}_{e}$），同时保持了a-IGZO (2:1:1)/a-IGZO (1:1:1) TFTs的高$\mu _{\text {FE}}$。此外，还计算了a-IGZO tft的氧间隙缺陷（Oi），并对其稳定性提高的内在机理进行了探讨。在a-IGZO tft中，Oi引起的降解随着In含量的增加而增加。进一步分析表明，双通道分层a-IGZO (2:1:1)/a-IGZO (1:1:1) tft显著降低了Oi并抑制了界面处的电子捕获，从而增强了器件的稳定性。总的来说，本研究的发现对于推进双通道层状a-IGZO tft具有重要价值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.