Plasma-Free Nitridation for MOSCAPs and GeOI GAAFETs Utilizing Cyclic Passivation of Ozone/Hydrazine With Low Leakage Current, Low Interface Traps, and High Thermal Stability

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-03-04 DOI:10.1109/TED.2025.3545401

Xin-Ren Yu;Jia Yuan Hung;Ta-Chun Cho;William Cheng-Yu Ma;Yao-Jen Lee;Yeong-Her Wang

{"title":"Plasma-Free Nitridation for MOSCAPs and GeOI GAAFETs Utilizing Cyclic Passivation of Ozone/Hydrazine With Low Leakage Current, Low Interface Traps, and High Thermal Stability","authors":"Xin-Ren Yu;Jia Yuan Hung;Ta-Chun Cho;William Cheng-Yu Ma;Yao-Jen Lee;Yeong-Her Wang","doi":"10.1109/TED.2025.3545401","DOIUrl":null,"url":null,"abstract":"Hydrazine (N2H4) plasma-free nitridation reacts on the interface layer oxidated by ozone, forming a high-quality GeON interfacial layer (IL) through alternating passivation. On metal-oxide-semiconductor capacitor (MOSCAP) with Al2O3/GeON gate stacked, the nitridation of N2H4 can effectively improve the interface quality and bring good electrical properties, such as low gate leakage current (<inline-formula> <tex-math>$3.27\\times 10^{-{5}}$ </tex-math></inline-formula> A/cm2 at <inline-formula> <tex-math>${V} _{\\text {G}} = 1$ </tex-math></inline-formula> V) and reduced interface defect density at midgap (<inline-formula> <tex-math>$8.59\\times 10^{{11}}$ </tex-math></inline-formula> cm<inline-formula> <tex-math>$^{-{2}} \\cdot \\text { eV}^{-{1}}$ </tex-math></inline-formula>). In addition, this work has fabricated layer-transferred GeOI gate-all-around FET (GAAFET) to verify the IV characteristics of N2H4. Compared with devices passivated with NH3, those with N2H4 have better on-/off-ratio, threshold voltage distribution, and thermal stability. The GeOI GAAFET CMOS inverter exhibits more symmetrical characteristics, indicating that the passivation with N2H4 is suitable for devices with GAA structure.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1597-1603"},"PeriodicalIF":2.9000,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10909634/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Hydrazine (N2H4) plasma-free nitridation reacts on the interface layer oxidated by ozone, forming a high-quality GeON interfacial layer (IL) through alternating passivation. On metal-oxide-semiconductor capacitor (MOSCAP) with Al2O3/GeON gate stacked, the nitridation of N2H4 can effectively improve the interface quality and bring good electrical properties, such as low gate leakage current (

$3.27\times 10^{-{5}}$

A/cm2 at

${V} _{\text {G}} = 1$

V) and reduced interface defect density at midgap (

$8.59\times 10^{{11}}$

$^{-{2}} \cdot \text { eV}^{-{1}}$

). In addition, this work has fabricated layer-transferred GeOI gate-all-around FET (GAAFET) to verify the IV characteristics of N2H4. Compared with devices passivated with NH3, those with N2H4 have better on-/off-ratio, threshold voltage distribution, and thermal stability. The GeOI GAAFET CMOS inverter exhibits more symmetrical characteristics, indicating that the passivation with N2H4 is suitable for devices with GAA structure.

查看原文本刊更多论文

利用臭氧/肼循环钝化低泄漏电流、低界面陷阱和高热稳定性的MOSCAPs和GeOI gaafet的无等离子体氮化

肼（N2H4）无等离子体氮化反应在被臭氧氧化的界面层上，通过交替钝化形成高质量的GeON界面层（IL）。在Al2O3/GeON栅极叠合的金属氧化物半导体电容器（MOSCAP）上，氮化N2H4可以有效地改善界面质量，并带来良好的电学性能，如在${V} _{\text {G}} = 1$ V处栅极漏电流低（$3.27\乘以10^{-{5}}$ A/cm2），中缝处界面缺陷密度降低（$8.59\乘以10^{{11}}$ cm $^{-{2}} \cdot \text {eV}^{-{1}}$）。此外，本工作还制作了层转移GeOI栅极全能场效应晶体管（GAAFET）来验证N2H4的IV特性。与NH3钝化器件相比，N2H4钝化器件具有更好的开/关比、阈值电压分布和热稳定性。GeOI GAAFET CMOS逆变器显示出更对称的特性，表明N2H4钝化适用于GAA结构器件。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.