Highly Efficient AlGaInP-Based Micro-LEDs Achieved by Plasma Sidewall Treatment

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Min-Hua Li;Xi Zheng;Kang Zhang;Chen-Ming Zhong;Zhi-Cheng Lu;Yi-Jun Lu;Zhong Chen;Wei-Jie Guo
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引用次数: 0

Abstract

The advancement of high-performance AlGaInP-based red micro-light-emitting diodes (micro-LEDs) has been significantly impeded by nonradiative recombination occurring at the sidewall surface, attributed to their extended carrier diffusion length. To address this issue, argon plasma treatment has been employed after dry etching of mesa to suppress the nonradiative recombination at sidewall, demonstrating that the external quantum efficiency (EQE) of micro-LEDs has been improved. The effectiveness of the argon plasma sidewall treatment was assessed through spatially resolved temperature-dependent carrier recombination dynamics.
等离子体侧壁处理实现高效algainp基微型led
基于algainp的高性能红色微发光二极管(micro- led)由于其载流子扩散长度的延长,在侧壁表面发生的非辐射复合严重阻碍了其发展。为了解决这一问题,在干蚀刻后采用氩等离子体处理来抑制侧壁的非辐射复合,表明微led的外量子效率(EQE)得到了提高。通过空间分辨的温度依赖载流子复合动力学来评估氩等离子体侧壁处理的有效性。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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