Highly Efficient AlGaInP-Based Micro-LEDs Achieved by Plasma Sidewall Treatment

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-02-24 DOI:10.1109/TED.2025.3541621

Min-Hua Li;Xi Zheng;Kang Zhang;Chen-Ming Zhong;Zhi-Cheng Lu;Yi-Jun Lu;Zhong Chen;Wei-Jie Guo

引用次数: 0

Abstract

The advancement of high-performance AlGaInP-based red micro-light-emitting diodes (micro-LEDs) has been significantly impeded by nonradiative recombination occurring at the sidewall surface, attributed to their extended carrier diffusion length. To address this issue, argon plasma treatment has been employed after dry etching of mesa to suppress the nonradiative recombination at sidewall, demonstrating that the external quantum efficiency (EQE) of micro-LEDs has been improved. The effectiveness of the argon plasma sidewall treatment was assessed through spatially resolved temperature-dependent carrier recombination dynamics.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.