Reliability and failure analysis of AlGaN/GaN HEMT with NiPtAu and PtAu gate

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-04-01 DOI:10.1016/j.microrel.2025.115718

M. Dammann , P. Brückner , R. Driad , S. Krause , S.A. Albahrani , B. Weber , M. Baeumler , H. Konstanzer , M. Mikulla , M. Simon-Najasek , S. Hübner , A. Graff

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引用次数: 0

Abstract

By comparing the reliability of 150 nm AlGaN/GaN HEMTs with PtAu gates to devices with NiPtAu SiN assisted gates, it was found that PtAu gates are more stable in terms of gate leakage current increase under HTRB step stress test and show smaller spread of the extrapolated lifetime values during long-term DC stress tests. An activation energy of 1.39 eV (1.97 eV) and a lifetime of around 10⁷ h at T_ch = 175 °C and V_d = 30 V has been extrapolated for devices with PtAu (NiPtAu) SiN assisted gate. By TEM cross sectioning and EDX mapping analysis of aged devices, the degradation of NiPtAu gate devices was attributed to a stress-induced local oxidation of the SiN passivation on the drain side of the gate foot. An activation energy of 1.15 eV and a lifetime of 5 · 10⁴ h at T_ch = 175 °C and V_d = 15 V has been extrapolated for devices with 100 nm T-gate reference technology. The faster degradation of the T-gate is possibly caused by a higher lateral electric field at the gate foot. T-gate reference technology lifetime is increased by more than an order of magnitude by reducing the drain voltage to 10 V.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.