Impact of drain-source leakage on the dynamic Ron of power HEMTs with p-GaN gate

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
S.L. Longato , D. Favero , A. Stockman , A. Nardo , P. Vanmeerbeek , M. Tack , G. Meneghesso , E. Zanoni , C. De Santi , M. Meneghini
{"title":"Impact of drain-source leakage on the dynamic Ron of power HEMTs with p-GaN gate","authors":"S.L. Longato ,&nbsp;D. Favero ,&nbsp;A. Stockman ,&nbsp;A. Nardo ,&nbsp;P. Vanmeerbeek ,&nbsp;M. Tack ,&nbsp;G. Meneghesso ,&nbsp;E. Zanoni ,&nbsp;C. De Santi ,&nbsp;M. Meneghini","doi":"10.1016/j.microrel.2025.115714","DOIUrl":null,"url":null,"abstract":"<div><div>We present an extensive analysis of the impact of drain-source off-state leakage current on the dynamic on-resistance of GaN HEMTs with p-GaN gate. We analyzed two wafers with epitaxial layers grown under different conditions. The difference in the epitaxial layers gives an impact on the off-state leakage. We analyzed all the leakage components demonstrating that the wafer with lower off-state leakage shows a large dynamic R<sub>on</sub> instability. Based on current transient measurements performed in temperature, this difference is explained by considering that a larger leakage (still below the nA) through the unintentionally-doped channel layer can ease the generation of positive charge at the bottom of the buffer, with consequent compensation of the dynamic R<sub>on</sub> effect. The methodology presented in this paper constitutes a rapid and effective approach to evaluate the conductivity of the GaN channel layer, and its contribution to device stability.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115714"},"PeriodicalIF":1.6000,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425001271","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

We present an extensive analysis of the impact of drain-source off-state leakage current on the dynamic on-resistance of GaN HEMTs with p-GaN gate. We analyzed two wafers with epitaxial layers grown under different conditions. The difference in the epitaxial layers gives an impact on the off-state leakage. We analyzed all the leakage components demonstrating that the wafer with lower off-state leakage shows a large dynamic Ron instability. Based on current transient measurements performed in temperature, this difference is explained by considering that a larger leakage (still below the nA) through the unintentionally-doped channel layer can ease the generation of positive charge at the bottom of the buffer, with consequent compensation of the dynamic Ron effect. The methodology presented in this paper constitutes a rapid and effective approach to evaluate the conductivity of the GaN channel layer, and its contribution to device stability.
求助全文
约1分钟内获得全文 求助全文
来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信