Jong Ho Park;Nirmaan Shanker;Suraj Cheema;Shang-Lin Hsu;Aditya Varma;Chia-Chun Lee;Chirag Garg;Urmita Siker;Li-Chen Wang;Chenming Hu;Sayeef Salahuddin
{"title":"Demonstration of High Transconductance Gate-All-Around Transistors Using Negative Capacitance ‘Super High-K’ Gate Stack","authors":"Jong Ho Park;Nirmaan Shanker;Suraj Cheema;Shang-Lin Hsu;Aditya Varma;Chia-Chun Lee;Chirag Garg;Urmita Siker;Li-Chen Wang;Chenming Hu;Sayeef Salahuddin","doi":"10.1109/LED.2025.3541547","DOIUrl":null,"url":null,"abstract":"We demonstrate a gate all around (GAA) negative capacitance FET (NCFET). The device provides an equivalent oxide thickness (EOT) of 6.5Å with unscavenged SiO2 interlayer (IL), and a high transconductance of 2.15 mS/<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m for L<inline-formula> <tex-math>${_{\\text {eff}}} =45$ </tex-math></inline-formula> nm, matching and exceeding what has been reported for MOSFETs with much shorter gate lengths and similar gate stack thickness. Our results demonstrate feasibility of negative capacitance gate stack in a GAA geometry for enhanced gate control, scaling, and performance.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"533-536"},"PeriodicalIF":4.1000,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10884970/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
We demonstrate a gate all around (GAA) negative capacitance FET (NCFET). The device provides an equivalent oxide thickness (EOT) of 6.5Å with unscavenged SiO2 interlayer (IL), and a high transconductance of 2.15 mS/$\mu $ m for L${_{\text {eff}}} =45$ nm, matching and exceeding what has been reported for MOSFETs with much shorter gate lengths and similar gate stack thickness. Our results demonstrate feasibility of negative capacitance gate stack in a GAA geometry for enhanced gate control, scaling, and performance.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.