5-kV SiC Deep-Implanted Superjunction MOSFETs

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-29 DOI:10.1109/LED.2025.3536382

Reza Ghandi;Collin Hitchcock;Tarak Saha;Eladio Delgado;Stacey Kennerley

引用次数: 0

Abstract

This work presents the development and characterization of 5kV deep-implanted SiC superjunction (SJ) MOSFETs. In these switches, the

$36\mu $

m deep n-type and p-type SJ pillars were formed using three rounds of epitaxial overgrowth and ultra-high-energy implantation (UHEI). We successfully fabricated SJ MOSFETs with pillar pitches of

$8\mu $

$10\mu $

m, and

$12\mu $

m, achieving an R

$_{\mathsf {\textbf {on,sp}}}$

of 9.5 m

$\Omega $

$\cdot $

cm2 at room temperature, which is 25% below the SiC unipolar limit. The devices also demonstrated sharp avalanche breakdown at 5.1kV with low leakage current density.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.