A Flexible Low Dropout Regulator Based on InSnO Thin-Film Transistors With Superior Bending Robustness and Ultra-Low Quiescent Current

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-02-06 DOI:10.1109/LED.2025.3539285

Tingrui Huang;Zuoxu Yu;Yuzhen Zhang;Di Gui;Mingming Liu;Kaizhi Sui;Wenting Xu;Guangan Yang;Wangran Wu;Weifeng Sun

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引用次数: 0

Abstract

In this work, a flexible low dropout regulator (LDO) based on InSnO (ITO) thin film transistors (TFTs) on a 50-

$\mu $

m polyimide (PI) substrate is demonstrated for the first time. The LDO is realized through integrated depleted- and enhanced-mode (D-mode and E-mode) ITO TFTs with 6-nm and 4-nm thick ITO channel layers respectively. Low-current design in 4-transistors (4T) voltage reference and restriction of tail current in error amplifier are adopted to achieve ultra-low quiescent current (I

$_{\text {q}}\text {)}$

down to 10 nA for the LDO. The ITO TFTs show great electrical robustness in bending experiment under bent radii (r

$_{\text {bent}}\text {)}$

of 5 mm with threshold voltage shift (

$\Delta $

$_{\text {th}}\text {)}$

less than 0.01 V. Both the output voltage and line regulation of the LDO change little under rbent of 5 mm. Besides, after 10000 bending cycles, the electrical properties of ITO TFTs maintain unchanged. Therefore, the LDO exhibits great potential in flexible application of power management unit (PMU) with low power consumption.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.