Anette Löfstrand;Marcus E. Sandberg;Johannes Svensson;Lars Fhager
{"title":"Scalable Vertical In–Ga–As Nanowire MOSFET With 67 mV/dec at 126μm Gate Width","authors":"Anette Löfstrand;Marcus E. Sandberg;Johannes Svensson;Lars Fhager","doi":"10.1109/LED.2025.3535408","DOIUrl":null,"url":null,"abstract":"Heterogeneous integration of III-V narrow bandgap transistors on silicon technology is desirable for high frequency circuit implementations. Such high-speed transistors must, however, scale to large gate widths to be suitable for general circuit design. Averaging among many variable channels is a key challenge for nanowire devices. A simplified, but high-speed compatible, nanowire device process was developed here. It utilizes metal plugs to reduce complexity in the gate patterning step. It also implements a spin coated BCB low-k dielectric as top interlayer. A vertical In-Ga–As MOSFET with 1600 nanowire channels and 110 nm gate length achieved a minimum subthreshold swing of <inline-formula> <tex-math>$\\mathrm {67~\\mathrm{mV/dec} }$ </tex-math></inline-formula> at <inline-formula> <tex-math>$\\mathrm {126~\\mu \\text {m} }$ </tex-math></inline-formula> gate width. The maximum transconductance was <inline-formula> <tex-math>$\\mathrm {0.88~\\text {m}\\text {S} /\\mu \\text {m}}$ </tex-math></inline-formula> at 0.5 V drain-source voltage, with <inline-formula> <tex-math>$\\mathrm {0.22~\\text {m}\\text {A} /\\mu \\text {m}}$ </tex-math></inline-formula> normalized drain current. These long-channel results are on par with state-of-the art, but achieved for a device scaled to unprecedented device width. In tandem with the BCB interlayer, these results promise a back-end-of-line compatible high-speed vertical nanowire technology for integration on silicon.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"560-563"},"PeriodicalIF":4.1000,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10855483/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Heterogeneous integration of III-V narrow bandgap transistors on silicon technology is desirable for high frequency circuit implementations. Such high-speed transistors must, however, scale to large gate widths to be suitable for general circuit design. Averaging among many variable channels is a key challenge for nanowire devices. A simplified, but high-speed compatible, nanowire device process was developed here. It utilizes metal plugs to reduce complexity in the gate patterning step. It also implements a spin coated BCB low-k dielectric as top interlayer. A vertical In-Ga–As MOSFET with 1600 nanowire channels and 110 nm gate length achieved a minimum subthreshold swing of $\mathrm {67~\mathrm{mV/dec} }$ at $\mathrm {126~\mu \text {m} }$ gate width. The maximum transconductance was $\mathrm {0.88~\text {m}\text {S} /\mu \text {m}}$ at 0.5 V drain-source voltage, with $\mathrm {0.22~\text {m}\text {A} /\mu \text {m}}$ normalized drain current. These long-channel results are on par with state-of-the art, but achieved for a device scaled to unprecedented device width. In tandem with the BCB interlayer, these results promise a back-end-of-line compatible high-speed vertical nanowire technology for integration on silicon.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.