Low-Temperature Crystallization of Amorphous InGaO by Ar Plasma Treatment for Thin Film Transistors

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-30 DOI:10.1109/LED.2025.3535880

Jiwon Sun;Taebin Lim;Byeonggwan Kim;Keunwoo Kim;Md. Hasnat Rabbi;Jin Jang

引用次数: 0

Abstract

We investigated the effect of Ar plasma treatment on the crystallization of indium-gallium-oxide (IGO) thin films. Ar plasma treatment accelerates the crystallization of amorphous IGO at

$350~^{\circ }$

C, as confirmed by XRD analysis. The crystalline IGO TFT using Ar plasma treatment exhibited field-effect mobility (

$\mu $

$_{\text {FE}}\text {)}$

of 43.2 cm2/V

$\cdot $

s and subthreshold swing (SS) of 0.11 V/dec. In addition, IGO TFTs showed excellent operation stabilities under both positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS) conditions. These results demonstrate that Ar plasma treatment is a promising technique for achieving high-performance IGO TFTs at low temperature, making it suitable for flexible display application.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.