AlScN Ferroelectric Diode Enabled CAM With 4F² Cell Size and Low Thermal Budget (330 °C)

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-02-04 DOI:10.1109/LED.2025.3538669

Wenxin Sun;Xiao Kou;Jiuren Zhou;Siying Zheng;Jiawei Li;Danyang Yao;Bochang Li;Tao Wu;Yan Liu;Yue Hao;Genquan Han

引用次数: 0

Abstract

In pursuit of high-density three-dimensional integrated content addressable memories (CAMs), we experimentally reported the single AlScN ferroelectric diode-enabled CAM, having an ultra-compact cell size of 4 F2 and a low thermal budget of 330 °C. This is realized by implementing one resistor (1R)-architecture cell design coupled with utilization of emerging ferroelectric AlScN. Such an easily implementable yet highly effective approach for high-density integrated CAMs holds significant promise for propelling forthcoming data-intensive applications forward.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.