Yanping Ni;Chuang Xue;Xiaoli Zhao;Peng Xue;Yanhong Tong;Qingxin Tang;Yichun Liu
{"title":"Photolithographic PEDOT:PSS Electrodes for Transparent and Conformal Organic Transistors","authors":"Yanping Ni;Chuang Xue;Xiaoli Zhao;Peng Xue;Yanhong Tong;Qingxin Tang;Yichun Liu","doi":"10.1109/LED.2025.3540472","DOIUrl":null,"url":null,"abstract":"Poly(3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) is widely used as electrode material for transparent and conformal organic thin-film transistors (TC-OTFTs) owing to its excellent conductivity, high transparency, and good mechanical flexibility. However, due to the lack of high-precision and high-density transparent flexible electrodes, the high-level integration of TC-OTFTs faces a huge challenge. Here, we propose a simple protective layer photolithography strategy that successfully achieves non-destructive photolithography of PEDOT:PSS. The pattern feature size is down to 750 nm, which is the smallest size of PEDOT:PSS reported so far. Based on such high-precision transparent electrodes, we successfully fabricate TC-OTFTs with a device density up to 50,020 transistors <inline-formula> <tex-math>${\\text{cm}}^{-{2}}$ </tex-math></inline-formula>, which is the highest value reported for TC-OTFTs. More strikingly, the device showcases outstanding mobility of 1.51 cm2<inline-formula> <tex-math>${\\text{V}}^{-{1}} {\\text{s}}^{-{1}}$ </tex-math></inline-formula>. This work provides a reliable photolithography strategy to realize scalable fabrication and high-density integration of TC-OTFTs, offering a significant potential for developing wearable invisible electronics with high density and performance.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"604-607"},"PeriodicalIF":4.1000,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10879341/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Poly(3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) is widely used as electrode material for transparent and conformal organic thin-film transistors (TC-OTFTs) owing to its excellent conductivity, high transparency, and good mechanical flexibility. However, due to the lack of high-precision and high-density transparent flexible electrodes, the high-level integration of TC-OTFTs faces a huge challenge. Here, we propose a simple protective layer photolithography strategy that successfully achieves non-destructive photolithography of PEDOT:PSS. The pattern feature size is down to 750 nm, which is the smallest size of PEDOT:PSS reported so far. Based on such high-precision transparent electrodes, we successfully fabricate TC-OTFTs with a device density up to 50,020 transistors ${\text{cm}}^{-{2}}$ , which is the highest value reported for TC-OTFTs. More strikingly, the device showcases outstanding mobility of 1.51 cm2${\text{V}}^{-{1}} {\text{s}}^{-{1}}$ . This work provides a reliable photolithography strategy to realize scalable fabrication and high-density integration of TC-OTFTs, offering a significant potential for developing wearable invisible electronics with high density and performance.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.