Low-Temperature Polycrystalline Silicon Thin-Film Transistor-Based Micro Light-Emitting Diode Pixel Circuit Using Quaternary Digital Pulse Width Modulation for Simple Structure and Short Delay Time

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-28 DOI:10.1109/LED.2025.3535586

Hwarim Im;Eun Kyo Jung;Hye-Won Woo;Kook Chul Moon;Yong-Sang Kim

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引用次数: 0

Abstract

We propose a low-temperature polycrystalline silicon thin-film transistor (TFT)-based micro light-emitting diode (

$\mu $

LED) pixel circuit using quaternary digital pulse width modulation (PWM). The proposed circuit uses a stepwise control signal to modulate the emission time of each subframe in four levels, thereby reducing the number of subframes by half compared with conventional binary digital driving. Because the stepwise control signal can directly change the PWM driving TFT from off-state to on-state, the proposed circuit exhibits a short delay time of

$1.83~\mu $

s and low luminance variations of 3.45% without requiring a compensation structure for the threshold voltage of the PWM driving TFT. The proposed pixel circuit can be efficiently used in high-quality

$\mu $

LED displays, ensuring a stable operation.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.