A Pixel Circuit With Improved Luminance Uniformity and Flicker for AMOLED Displays With a Wide VRR Range of 15 Hz to 360 Hz

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-28 DOI:10.1109/LED.2025.3535717

Younsik Kim;Sung-Min Wee;Kyunghoon Chung;Byungchang Yu;Jaemyung Lim;Oh-Kyong Kwon

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引用次数: 0

Abstract

This letter proposes a 6T2C pixel circuit designed for LTPS-based AMOLED displays to improve luminance uniformity and reduce flicker across a wide range of variable refresh rates (VRRs). The proposed circuit employs a two-step compensation method to address variations in the threshold voltage and subthreshold slope of driving thin-film transistors (TFTs), improving luminance uniformity. Additionally, it minimizes the hysteresis effect of TFTs using an inducing hole-trapping technique, resulting in lower flicker. The proposed pixel circuit was verified with 48 samples for a 5.8-inch QHD AMOLED display, achieving notable reductions in emission current errors (ECEs) within a VRR range of 15 Hz to 360 Hz. The luminance uniformity performance was improved compared to a previous 7T2C circuit, with measured spatial ECEs of +3.4/−3.4 LSB versus +4.1/−4.2 LSB at the 256th gray level. The flicker performance was also improved, with measured temporal ECEs of +0.4 LSB and −1.1 LSB versus −0.8 LSB and −3.2 LSB at the 16th and 256th gray levels, respectively.

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一种用于宽VRR范围为15 Hz至360 Hz的AMOLED显示器的改进亮度均匀性和闪烁的像素电路

这封信提出了一种设计用于基于ltps的AMOLED显示器的6T2C像素电路，以改善亮度均匀性并减少大范围可变刷新率（vrr）的闪烁。该电路采用两步补偿方法来解决驱动薄膜晶体管（TFTs）的阈值电压和亚阈值斜率的变化，提高了亮度均匀性。此外，它使用诱导空穴捕获技术最小化tft的滞后效应，导致较低的闪烁。提出的像素电路在5.8英寸QHD AMOLED显示器上进行了48个样本的验证，在15 Hz到360 Hz的VRR范围内显著降低了发射电流误差（ECEs）。与之前的7T2C电路相比，该电路的亮度均匀性得到了改善，在256级灰度下，测量到的空间ECEs为+3.4/−3.4 LSB，而不是+4.1/−4.2 LSB。闪烁性能也得到了改善，在16级和256级灰度下，测量到的时间ECEs分别为+0.4 LSB和- 1.1 LSB，而在16级和256级灰度下分别为- 0.8 LSB和- 3.2 LSB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.