64% AlGaN Channel HFET With High Johnson’s Figure of Merit (>6 THz·V)

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-02-13 DOI:10.1109/LED.2025.3541145

Jiahao Chen;Parthasarathy Seshadri;Kenneth Stephenson;Md Abdullah Mamun;Ruixin Bai;Zehuan Wang;Asif Khan;Chirag Gupta

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引用次数: 0

Abstract

In this letter, we report a heterostructure field effect transistor (HFET) with Al0.87Ga0.13N barrier and Al0.64Ga0.36N channel grown by metalorganic chemical vapor deposition (MOCVD). TLM measurements of the structure showed a sheet resistance of

$\sim ~2000~\Omega $

/sq and linear ohmic contact resistance of

$4.54~\Omega \cdot $

mm. A HFET with a gate length of

$\sim ~200$

nm, source-drain spacing of

$4~\mu $

m showed a peak transconductance of ~40 mS/mm and a high peak drain current of ~0.6 A/mm. A current gain cutoff frequency (f

$_{\text {T}}\text {)}$

of 15.7 GHz and a power gain cutoff frequency of 20.4 GHz was observed. The breakdown voltage of this device is 390 V, yielding a high Johnson’s figure of merit (JFOM) of 6.1 THz

$\cdot $

V. This JFOM value is one of the highest reported JFOM values for AlxGa

$_{\text {1-{x}}}$

N channel HFET (x >0.4) and also for other ultra-wide bandgap (UWBG) transistors.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.