64% AlGaN Channel HFET With High Johnson’s Figure of Merit (>6 THz·V)

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-02-13 DOI:10.1109/LED.2025.3541145

Jiahao Chen;Parthasarathy Seshadri;Kenneth Stephenson;Md Abdullah Mamun;Ruixin Bai;Zehuan Wang;Asif Khan;Chirag Gupta

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Abstract

In this letter, we report a heterostructure field effect transistor (HFET) with Al0.87Ga0.13N barrier and Al0.64Ga0.36N channel grown by metalorganic chemical vapor deposition (MOCVD). TLM measurements of the structure showed a sheet resistance of

$\sim ~2000~\Omega $

/sq and linear ohmic contact resistance of

$4.54~\Omega \cdot $

mm. A HFET with a gate length of

$\sim ~200$

nm, source-drain spacing of

$4~\mu $

m showed a peak transconductance of ~40 mS/mm and a high peak drain current of ~0.6 A/mm. A current gain cutoff frequency (f

$_{\text {T}}\text {)}$

of 15.7 GHz and a power gain cutoff frequency of 20.4 GHz was observed. The breakdown voltage of this device is 390 V, yielding a high Johnson’s figure of merit (JFOM) of 6.1 THz

$\cdot $

V. This JFOM value is one of the highest reported JFOM values for AlxGa

$_{\text {1-{x}}}$

N channel HFET (x >0.4) and also for other ultra-wide bandgap (UWBG) transistors.

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具有高约翰逊品质因数的64% AlGaN通道HFET （bbb60 THz·V）

在这篇论文中，我们报道了一种用金属有机化学气相沉积（MOCVD）生长的具有Al0.87Ga0.13N势垒和Al0.64Ga0.36N沟道的异质结构场效应晶体管（HFET）。TLM测量结果显示，该结构的片电阻为$\sim ~2000~\Omega $ /sq，线性欧姆接触电阻为$4.54~\Omega \cdot $ mm。栅极长度为$\sim ~200$ nm，源极漏极间距为$4~\mu $ m的HFET，其峰值跨导率为40 mS/mm，峰值漏极电流为0.6 a /mm。电流增益截止频率（f $_{\text {T}}\text {)}$）为15.7 GHz，功率增益截止频率为20.4 GHz。该器件的击穿电压为390 V，产生6.1太赫兹$\cdot $ V的高约翰逊因数（JFOM）。该JFOM值是AlxGa $_{\text {1-{x}}}$ N沟道HFET （x >0.4）和其他超宽带隙（UWBG）晶体管中报道的最高JFOM值之一。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.