Self-Powered Photodetectors Based on PdSe2/ Al2O3/AlGaN Schottky Heterojunctions for Solar-Blind Ultraviolet Communication

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-02-05 DOI:10.1109/LED.2025.3539235

Tingting Lin;Liwei Liu;Changjian Zhou;Wenliang Wang

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引用次数: 0

Abstract

Generally, the slow response occurs in the AlGaN-based self-powered solar-blind photodetectors (SBPDs), owing to the low carrier mobility and high density of surface traps in AlGaN. To tackle the issues, PdSe2/Al2O3/AlGaN SBPDs have been proposed. Thanks to the direct growth of single-crystal PdSe2 with high work function and excellent mobility for constructing high-quality Schottky heterojunctions with a sharp interface and thin high-k Al2O3 interlayer for passivating dangling bonds at the interface and enhancing the Schottky barrier height, the as-prepared self-powered SBPDs demonstrate a fast response speed of 2.9/3.5 ms, a high responsivity of 95.3 mA/W, and an exceedingly good detectivity of

${1}.{41}\times {10} ^{{12}}$

Jones @ 0 V under 254 nm light irradiation. Moreover, a solar-blind light communication (SBLC) system based on the device has been proposed. This work provides an effective approach for fabricating self-powered SBPDs towards application in the SBLC system.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.