Self-Powered Photodetectors Based on PdSe2/ Al2O3/AlGaN Schottky Heterojunctions for Solar-Blind Ultraviolet Communication

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-02-05 DOI:10.1109/LED.2025.3539235

Tingting Lin;Liwei Liu;Changjian Zhou;Wenliang Wang

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引用次数: 0

Abstract

Generally, the slow response occurs in the AlGaN-based self-powered solar-blind photodetectors (SBPDs), owing to the low carrier mobility and high density of surface traps in AlGaN. To tackle the issues, PdSe2/Al2O3/AlGaN SBPDs have been proposed. Thanks to the direct growth of single-crystal PdSe2 with high work function and excellent mobility for constructing high-quality Schottky heterojunctions with a sharp interface and thin high-k Al2O3 interlayer for passivating dangling bonds at the interface and enhancing the Schottky barrier height, the as-prepared self-powered SBPDs demonstrate a fast response speed of 2.9/3.5 ms, a high responsivity of 95.3 mA/W, and an exceedingly good detectivity of

${1}.{41}\times {10} ^{{12}}$

Jones @ 0 V under 254 nm light irradiation. Moreover, a solar-blind light communication (SBLC) system based on the device has been proposed. This work provides an effective approach for fabricating self-powered SBPDs towards application in the SBLC system.

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基于PdSe2/ Al2O3/AlGaN Schottky异质结的太阳盲紫外通信自供电光电探测器

由于AlGaN的载流子迁移率低，表面陷阱密度高，因此在基于AlGaN的自供电太阳盲光电探测器（sbpd）中，响应速度较慢。为了解决这些问题，人们提出了PdSe2/Al2O3/AlGaN sbpd。由于直接生长的单晶PdSe2具有较高的功函数和优良的迁移率，可用于构建高质量的肖特基异质结，具有尖锐的界面和薄的高k Al2O3中间层，用于钝化界面上的悬垂键并提高肖特基势垒高度，所制备的自供电sbpd具有2.9/3.5 ms的快速响应速度，95.3 mA/W的高响应率，以及非常好的探测率。{41}\乘以{10}^{{12}}$ Jones @ 0 V在254 nm光照射下。此外，还提出了一种基于该器件的日盲光通信系统。这一工作为自供电式sbpd在SBLC系统中的应用提供了一种有效的方法。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.