Miltiadis K. Nakos , Andreas Tsormpatzoglou , Dimitrios H. Tassis , Theodoros A. Oproglidis , Constantinos T. Angelis , Charalabos A. Dimitriadis
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引用次数: 0
Abstract
In this study, we investigate the impact of the source and drain (S/D) underlap regions on the electrical characteristics of short-channel double-gate junctionless transistors (DG JLTs). Analytical expression for the potential distribution in the gate overlap and S/D underlap regions is introduced, which relies on a single fitting parameter and the gate fringe capacitance in the underlap regions. The derived potential distribution shows good agreement with simulation results across different underlap lengths and gate/drain bias voltages. Consequently, new expressions for the threshold voltage and the subthreshold swing coefficient of DG JLTs are developed comprising the effect of the S/D underlap regions, which are used for upgrading our previous continuous and symmetric analytical drain current compact model. The findings highlight the significant influence of the S/D underlap regions on the electrical characteristics of DG JLTs, suggesting a need for their careful consideration in drain current compact modeling.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.