Failure modes competition and long-term reliability in the isothermal aging of sintered Cu joints

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Jianbo Xin , Xiaochun Lv , Yue Gao , Le Yang , Sushi Liu , Ke Li , Minghao Zhou , William Cai , Jing Zhang , Yang Liu
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引用次数: 0

Abstract

Sintered Cu joints may experience diminished reliability due to oxidation during the operation of wide-bandgap (WBG) semiconductor devices. This study utilized the aging process of Cu sintered joints in a vacuum environment as a reference to investigate the microstructural evolution and mechanical property changes of Cu sintered joints under varying aging temperatures in air. Based on the fracture morphology, the failure modes of the joints were categorized into three primary types: (1) ductile fracture within the sintered layer, (2) brittle fracture within the sintered layer, and (3) brittle fracture at the interface. These variations are primarily attributed to increased oxidation during the aging process, which leads to a continuous increase in joint strength and a transition between distinct fracture modes characterized by competing failure mechanisms. Additionally, Kirkendall voids were observed in all joints aged at varying temperatures, and mixed ductile-brittle fracture morphology was evident on the fracture surfaces, indicating that Cu sintered joints undergo a similar aging process across different temperatures.
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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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