Failure modes competition and long-term reliability in the isothermal aging of sintered Cu joints

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-03-28 DOI:10.1016/j.microrel.2025.115717

Jianbo Xin , Xiaochun Lv , Yue Gao , Le Yang , Sushi Liu , Ke Li , Minghao Zhou , William Cai , Jing Zhang , Yang Liu

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Abstract

Sintered Cu joints may experience diminished reliability due to oxidation during the operation of wide-bandgap (WBG) semiconductor devices. This study utilized the aging process of Cu sintered joints in a vacuum environment as a reference to investigate the microstructural evolution and mechanical property changes of Cu sintered joints under varying aging temperatures in air. Based on the fracture morphology, the failure modes of the joints were categorized into three primary types: (1) ductile fracture within the sintered layer, (2) brittle fracture within the sintered layer, and (3) brittle fracture at the interface. These variations are primarily attributed to increased oxidation during the aging process, which leads to a continuous increase in joint strength and a transition between distinct fracture modes characterized by competing failure mechanisms. Additionally, Kirkendall voids were observed in all joints aged at varying temperatures, and mixed ductile-brittle fracture morphology was evident on the fracture surfaces, indicating that Cu sintered joints undergo a similar aging process across different temperatures.

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烧结铜接头等温时效失效模式竞争及长期可靠性研究

在宽带隙（WBG）半导体器件的运行过程中，烧结铜接头可能会因氧化而降低可靠性。本研究以真空环境下Cu烧结接头的时效过程为参照，研究不同空气时效温度下Cu烧结接头的组织演变和力学性能变化。根据接头的断裂形态，将接头的破坏模式划分为3种主要类型：(1)烧结层内韧性断裂，(2)烧结层内脆性断裂，(3)界面处脆性断裂。这些变化主要是由于老化过程中氧化增加，导致接头强度不断增加，并在不同的断裂模式之间过渡，其特征是竞争破坏机制。此外，在不同温度下时效的所有接头都观察到Kirkendall空洞，断口表面存在明显的韧脆混合断裂形态，表明Cu烧结接头在不同温度下的时效过程相似。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.