Growth, optimization and high-temperature performance of GeO2/Ga2O3 MOSCAPs

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
N. Manikanthababu , Subrata Karmakar , Ishtiaq Firoz Shiam , Injamamul Hoque Emu , Ariful Haque , Ravi Droopad
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引用次数: 0

Abstract

In this study, GeO2 thin films were grown by pulsed laser deposition (PLD) on β-Ga2O3, (201) single crystal substrates to fabricate metal-oxide-semiconductor capacitors (MOSCAPs) to investigate their properties using current-voltage (I-V) and capacitance-voltage (C-V) measurements at elevated temperatures. The amorphous nature, an ultrawide bandgap of ∼5.11 eV and the elemental compositions with their corresponding chemical states of the GeO2 thin films were confirmed by X-ray diffraction (XRD), UV–Vis spectrometery and the x-ray photoelectron spectroscopy (XPS), respectively. The Ge-3d deconvoluted peak at 32.4 eV confirms the elemental bonding in GeO2, with an additional peak found at 30.9 eV that can be attributed to a small portion of GeO2-x. The Au/GeO2/Ga2O3 MOSCAPs were fabricated to study its high-temperature performance from room temperature (RT) to 300 °C. The reverse leakage current was increased from 1.19 × 10−7 A to 3.66 × 10−4 A (nearly four orders of magnitude) as the temperature rises from RT to 300 °C. Due to the presence of oxygen vacancy in GeO2-x, the Poole-Frenkel current conduction mechanism was utilized to determine a trap level of 0.8 V (below the conduction band of GeO2) with an activation energy of 0.55 eV. The C–V measurements also show a significant contribution from defects in the flat-band voltage shift and the changes of the slopes indicates an increase in the oxide and interface-trapped charges. The density of oxide-trapped charges increased from 3.9 × 1012 cm−2 to 1.3 × 1013 cm−2, as the temperature reached 300 °C. Similarly, the density of interface-trapped charges increased from 3.4 × 1012 cm−2 at RT to 1.1 × 1013 cm−2 at 300 °C. The flat-band voltage shift and density of interface-trapped charges of GeO2/Ga2O3 MOSCAPs exhibit exciting materials characteristics for next-generation high-power and high-temperature electronic devices.
GeO2/Ga2O3 MOSCAPs的生长、优化及高温性能
在本研究中,采用脉冲激光沉积(PLD)在β-Ga2O3,(−201)单晶衬底上生长GeO2薄膜,制备金属氧化物半导体电容器(MOSCAPs),并通过高温下的电流电压(I-V)和电容电压(C-V)测量研究其性能。通过x射线衍射(XRD)、紫外可见光谱(UV-Vis)和x射线光电子能谱(XPS)分别证实了GeO2薄膜的无定形性质、约5.11 eV的超宽带隙以及相应的元素组成和化学状态。32.4 eV处的Ge-3d反旋峰证实了GeO2中的元素键合,另外在30.9 eV处发现了一个额外的峰,可以归因于一小部分GeO2-x。制备了Au/GeO2/Ga2O3 MOSCAPs,研究了其室温至300℃的高温性能。当温度从RT升高到300℃时,反漏电流从1.19 × 10−7 A增加到3.66 × 10−4 A(近4个数量级)。由于GeO2-x中存在氧空位,利用Poole-Frenkel电流传导机制确定了0.8 V(低于GeO2的导带)的陷阱能级,活化能为0.55 eV。C-V测量也显示了缺陷在平带电压位移中的显著贡献,斜率的变化表明氧化物和界面捕获电荷的增加。当温度达到300℃时,被氧化物捕获的电荷密度从3.9 × 1012 cm−2增加到1.3 × 1013 cm−2。同样,界面捕获电荷的密度从室温下的3.4 × 1012 cm−2增加到300℃时的1.1 × 1013 cm−2。GeO2/Ga2O3 MOSCAPs的平带电压位移和界面捕获电荷密度表现出令人兴奋的材料特性,可用于下一代高功率和高温电子器件。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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