Growth, optimization and high-temperature performance of GeO2/Ga2O3 MOSCAPs

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
N. Manikanthababu , Subrata Karmakar , Ishtiaq Firoz Shiam , Injamamul Hoque Emu , Ariful Haque , Ravi Droopad
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引用次数: 0

Abstract

In this study, GeO2 thin films were grown by pulsed laser deposition (PLD) on β-Ga2O3, (201) single crystal substrates to fabricate metal-oxide-semiconductor capacitors (MOSCAPs) to investigate their properties using current-voltage (I-V) and capacitance-voltage (C-V) measurements at elevated temperatures. The amorphous nature, an ultrawide bandgap of ∼5.11 eV and the elemental compositions with their corresponding chemical states of the GeO2 thin films were confirmed by X-ray diffraction (XRD), UV–Vis spectrometery and the x-ray photoelectron spectroscopy (XPS), respectively. The Ge-3d deconvoluted peak at 32.4 eV confirms the elemental bonding in GeO2, with an additional peak found at 30.9 eV that can be attributed to a small portion of GeO2-x. The Au/GeO2/Ga2O3 MOSCAPs were fabricated to study its high-temperature performance from room temperature (RT) to 300 °C. The reverse leakage current was increased from 1.19 × 10−7 A to 3.66 × 10−4 A (nearly four orders of magnitude) as the temperature rises from RT to 300 °C. Due to the presence of oxygen vacancy in GeO2-x, the Poole-Frenkel current conduction mechanism was utilized to determine a trap level of 0.8 V (below the conduction band of GeO2) with an activation energy of 0.55 eV. The C–V measurements also show a significant contribution from defects in the flat-band voltage shift and the changes of the slopes indicates an increase in the oxide and interface-trapped charges. The density of oxide-trapped charges increased from 3.9 × 1012 cm−2 to 1.3 × 1013 cm−2, as the temperature reached 300 °C. Similarly, the density of interface-trapped charges increased from 3.4 × 1012 cm−2 at RT to 1.1 × 1013 cm−2 at 300 °C. The flat-band voltage shift and density of interface-trapped charges of GeO2/Ga2O3 MOSCAPs exhibit exciting materials characteristics for next-generation high-power and high-temperature electronic devices.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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