Photocatalytic reduction of Cr(VI) by novel shuttle-like Bi2S3 nanocrystals under visible light

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Zhenning Yang , Xiuyue Jin , Hua Lu , Shuzhi Tong, Jue Chen, Meng Deng, Fei Chen
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引用次数: 0

Abstract

Heavy metal contamination in industrial wastewater poses a significant threat to the environment and public health. To address this issue, various nanocrystalline materials have emerged as promising photocatalysts for water treatment. In this research, by using ultra-high molecular weight of polyvinylpyrrolidone (PVP), a novel shuttle-like Bi2S3 nanocrystal was synthesized via a facile hydrothermal method. The material exhibited outstanding performance in water treatment, particularly in the photocatalytic reduction of Cr(VI) to Cr(III) under visible light. The photocatalytic performance of high concentration Cr(VI) (10 mg/L) reduction efficiency with shuttle-like Bi2S3 can reach near 100 % in only 5 min (k = 1.4754 min−1). In-situ oxidants capture experiments confirmed ∙O2− was the main active species in the reduction of Cr(VI). This study highlights a cost-effective and scalable approach to fabricating Bi2S3 nanocrystals, offering significant potential for morphology control of nanomaterials and industrial water treatment applications for heavy metal remediation.

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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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