Response of the bipolar voltage regulator under neutron irradiation and consecutive pulsed gamma irradiation

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-03-28 DOI:10.1016/j.microrel.2025.115709

Ruibin Li, Junlin Li, Chenhui Wang, Wei Chen, Weijian Liu, Shilin Yu, Xiaoyan Bai, Xiaoqiang Guo, Chao Qi, Yan Liu, Xiaoming Jin

{"title":"Response of the bipolar voltage regulator under neutron irradiation and consecutive pulsed gamma irradiation","authors":"Ruibin Li, Junlin Li, Chenhui Wang, Wei Chen, Weijian Liu, Shilin Yu, Xiaoyan Bai, Xiaoqiang Guo, Chao Qi, Yan Liu, Xiaoming Jin","doi":"10.1016/j.microrel.2025.115709","DOIUrl":null,"url":null,"abstract":"<div><div>Two types of radiation experiments were carried out on a bipolar three-terminal fixed voltage regulator μA78m33. The device was first irradiated by neutron, and then by pulsed gamma irradiation, for the purpose of finding out the impact of neutron displacement damage on the pulsed gamma radiation response of the device. The results show that, as irradiated by neutrons in power-up state, the device with larger load current can withstand higher neutron fluence, which indicates that the carrier concentration in the device can alleviate the displacement damage to some extent; when the device is irradiated by pulsed gamma, the output voltage produces a significant interruption and the duration of the interruption is shortened with the increase of the neutron fluence. It is shown that the displacement defects caused by neutrons reduce the transient interruption duration of the regulator, mainly because the recombination centers formed by the displacement defects significantly reduce the minority carrier lifetime, thus reducing the duration of the photocurrent generated by pulsed gamma irradiation, but has little relation with the variation of the current gain of the transistor induced by neutron irradiation.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115709"},"PeriodicalIF":1.6000,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425001222","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

Two types of radiation experiments were carried out on a bipolar three-terminal fixed voltage regulator μA78m33. The device was first irradiated by neutron, and then by pulsed gamma irradiation, for the purpose of finding out the impact of neutron displacement damage on the pulsed gamma radiation response of the device. The results show that, as irradiated by neutrons in power-up state, the device with larger load current can withstand higher neutron fluence, which indicates that the carrier concentration in the device can alleviate the displacement damage to some extent; when the device is irradiated by pulsed gamma, the output voltage produces a significant interruption and the duration of the interruption is shortened with the increase of the neutron fluence. It is shown that the displacement defects caused by neutrons reduce the transient interruption duration of the regulator, mainly because the recombination centers formed by the displacement defects significantly reduce the minority carrier lifetime, thus reducing the duration of the photocurrent generated by pulsed gamma irradiation, but has little relation with the variation of the current gain of the transistor induced by neutron irradiation.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.