Pressure effects on the electronic, optical, and thermodynamic properties in van der waals multiferroic NiI2

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
A. Bouhmouche , R. Moubah , S. Elkhouad , Z. Yamkane , N.T. Mliki
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引用次数: 0

Abstract

Recently, NiI2 was demonstrated as the first purely 2D multiferroic material, offering new insights into the interplay between magnetic and ferroelectric order in two-dimensional systems, and showcasing its potential as a versatile material for next-generation spintronic and multifunctional devices. In this work, we investigate the electronic, optical, and thermodynamic properties of the newly identified van der Waals multiferroic material NiI2 using ab-initio calculations, focusing on the impact of applied pressure on its properties. From an electronic perspective, NiI2 undergoes a transition from a semiconductor (1.1 eV) to a metallic state at 25 GPa due to pressure-induced modifications of the electronic structure, particularly the hybridization of Ni 3d and I 5p orbitals. The study also investigates the anisotropic behavior of NiI2 under pressure, the transition occurring at 15 GPa along the ab-plane and at 13 GPa along the c-axis. This demonstrates the material's distinct response to pressure in different crystallographic directions. The effect of hydrostatic pressure on the magnetic properties of NiI2 was also examined, revealing a reinforcement of antiferromagnetic interactions with increasing pressure. Moreover, significant enhancements are observed in the material's optical characteristics, particularly in its optical conductivity, the material exhibits an increase from 1221 (Ω cm)−1 at 0 GPa to 2169 (Ω cm)−1 at 9 GPa. Similarly, the absorption coefficient spectrum improves from 1.2 × 105 cm−1 at 0 GPa to 1.8 × 105 cm−1 at 9 GPa, around 2 eV. Interestingly, the static refractive index also shows a significant enhancement, increasing from 3.6 under ambient pressure to 4.2 at 9 GPa. These changes are attributed to structural modifications and increased electron delocalization. Additionally, thermodynamic analysis, including heat capacity and entropy, provides key insights into the material's behavior under pressure. The heat capacity increases linearly with temperature, following the Dulong-Petit law, while the normalized heat capacity exhibits a peak that is in line with a magnetic phase transition at around 59 K, a peak that shifts with pressure. These findings highlight the potential of NiI2 for multifunctional devices, where pressure plays a crucial role in tuning its properties.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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