Study of half metallic ferromagnetism, Curie temperature, and thermoelectric aspects of double perovskite oxides Ba2XMoO6 (X = Cr, Mn, Fe, Co) for spintronic applications
IF 4.2 3区 工程技术Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
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引用次数: 0
Abstract
Spintronics is a cutting-edge technology that manipulates both the spin and charge of electrons to control the behaviour of multifunctional devices. Here in the current paper, the half-metallic ferromagnetism, electronic properties, and influence of transport parameters on the magnetic behaviour of double perovskite oxides Ba2XMoO6 (X = Cr, Mn, Fe, Co) are addressed comprehensively by Wien2k and Boltz Trap codes. The ferromagnetic (FM) state exhibits higher optimized energy compared to antiferromagnetic (AFM) and paramagnetic (PM) states, showing enhanced stability. The negative formation energy (−2.65, −2.62, −2.49, −2.46) eV further confirms the thermodynamic stability of these materials. The spin polarization density and magnetic moments (4.0, 5.0, 4.0, 3.0)μB collectively validate the 100 % spin polarization. The Heisenberg model ensures the Curie temperature (340, 331, 325, 313)K at room temperature. The band structures exhibit discrete metallic and insulating characteristics for spin-up and spin-down configurations, thereby consolidating half-metallic ferromagnetism in these materials. The double exchange mechanism, hybridization p-d states, and associated exchange constants influence the exchange splitting energies, which eventually elaborate the function and nature of the spin of electrons that establish ferromagnetism in the studied system. The analysis of the Seebeck coefficient and thermal and electrical conductivities have explained the influence of transport properties on the spin functionality of the electrons. Additionally, the power factor has been reported to assess their thermoelectric performance. The stable structures, above-room temperature ferromagnetism, and ultralow lattice thermal conductivity increase their importance for spintronics.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.