Flexible Transparent Multifunctional Electrodes With Enhanced Stability for OLEDs: Integration of Electrode and Encapsulation Functions

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-02-05 DOI:10.1109/LED.2025.3539360

So Yeong Jeong;Tae-Woo Lee;Kyung Cheol Choi;Eun Gyo Jeong

{"title":"Flexible Transparent Multifunctional Electrodes With Enhanced Stability for OLEDs: Integration of Electrode and Encapsulation Functions","authors":"So Yeong Jeong;Tae-Woo Lee;Kyung Cheol Choi;Eun Gyo Jeong","doi":"10.1109/LED.2025.3539360","DOIUrl":null,"url":null,"abstract":"A novel multifunctional electrode, ZnS/Ag/Al-doped ZnO/Ag/Al-doped ZnO (ZaAaA), was developed for transparent flexible organic light-emitting diodes (TFOLEDs), addressing the challenges of conductivity, optical transparency, and moisture impermeability. The ZaAaA electrode, fabricated via atomic layer deposition (ALD) with controlled Al doping in ZnO, achieved a remarkable combination of properties: a transmittance of 78.71% at 550 nm, a sheet resistance of <inline-formula> <tex-math>$2.19~\\Omega $ </tex-math></inline-formula> sq1, and an exceptional water vapor transmission rate (WVTR) of <inline-formula> <tex-math>$1.49\\times 105$ </tex-math></inline-formula> g m<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula> day<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>. The multilayer design integrates ZnS for Ag nucleation, Ag for enhanced conductivity, and AZO for its dual role as a transparent conductor and an encapsulation barrier. The ZaAaA electrode demonstrated outstanding mechanical flexibility and reliable performance under harsh environmental conditions (60°C, 90% RH). Integrated into TFOLEDs, the ZaAaA electrode enabled high optoelectronic performance, achieving over 80% luminance retention after 4,500 hours and negligible degradation after mechanical bending. This work establishes the ZaAaA electrode as a transformative solution for flexible and transparent electronics, eliminating the need for separate encapsulation layers while offering exceptional durability and multifunctionality. The integration of ALD-AZO in a dielectric/metal/dielectric structure highlights its potential to accelerate the development of next-generation flexible optoelectronic devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"620-623"},"PeriodicalIF":4.1000,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10876164/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

A novel multifunctional electrode, ZnS/Ag/Al-doped ZnO/Ag/Al-doped ZnO (ZaAaA), was developed for transparent flexible organic light-emitting diodes (TFOLEDs), addressing the challenges of conductivity, optical transparency, and moisture impermeability. The ZaAaA electrode, fabricated via atomic layer deposition (ALD) with controlled Al doping in ZnO, achieved a remarkable combination of properties: a transmittance of 78.71% at 550 nm, a sheet resistance of

$2.19~\Omega $

sq1, and an exceptional water vapor transmission rate (WVTR) of

$1.49\times 105$

g m

$^{-{2}}$

day

$^{-{1}}$

. The multilayer design integrates ZnS for Ag nucleation, Ag for enhanced conductivity, and AZO for its dual role as a transparent conductor and an encapsulation barrier. The ZaAaA electrode demonstrated outstanding mechanical flexibility and reliable performance under harsh environmental conditions (60°C, 90% RH). Integrated into TFOLEDs, the ZaAaA electrode enabled high optoelectronic performance, achieving over 80% luminance retention after 4,500 hours and negligible degradation after mechanical bending. This work establishes the ZaAaA electrode as a transformative solution for flexible and transparent electronics, eliminating the need for separate encapsulation layers while offering exceptional durability and multifunctionality. The integration of ALD-AZO in a dielectric/metal/dielectric structure highlights its potential to accelerate the development of next-generation flexible optoelectronic devices.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.