ScAlN-on-SiC Kᵤ-Band Sezawa Solidly-Mounted Bidimensional Mode Resonators

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-02-13 DOI:10.1109/LED.2025.3541373

Luca Colombo;Luca Spagnuolo;Kapil Saha;Gabriel Giribaldi;Pietro Simeoni;Matteo Rinaldi

{"title":"ScAlN-on-SiC Kᵤ-Band Sezawa Solidly-Mounted Bidimensional Mode Resonators","authors":"Luca Colombo;Luca Spagnuolo;Kapil Saha;Gabriel Giribaldi;Pietro Simeoni;Matteo Rinaldi","doi":"10.1109/LED.2025.3541373","DOIUrl":null,"url":null,"abstract":"This letter reports on Solidly-Mounted Bidimensional Mode Resonators (S2MRs) exploiting a highly-optimized Sezawa mode in 30% Scandium-doped Aluminum Nitride (ScAlN) on Silicon Carbide (SiC) and operating near 16 GHz. Experimental results demonstrate mechanical quality factors (<inline-formula> <tex-math>${Q}_{m}$ </tex-math></inline-formula>) as high as 380, Bode quality factors (<inline-formula> <tex-math>${Q}_{\\textit {Bode}}$ </tex-math></inline-formula>) approaching 500, electromechanical coupling coefficients (<inline-formula> <tex-math>${k}_{t}^{{2}}$ </tex-math></inline-formula>) of 4.5%, an overall Figure of Merit (<inline-formula> <tex-math>$\\textit {FOM} = {Q}_{m} \\cdot {k}_{t}^{{2}}$ </tex-math></inline-formula>) exceeding 17, and power handling greater than 20 dBm for devices closely matched to <inline-formula> <tex-math>$50~\\Omega $ </tex-math></inline-formula>. To the best of the authors’ knowledge, S2MRs exhibit the highest Key Performance Indicators (KPIs) among solidly mounted resonators in the Ku-band, paving the way for the integration of nanoacoustic devices on fast substrates with high-power electronics, tailored for military and harsh-environment applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"660-663"},"PeriodicalIF":4.1000,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10884041/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This letter reports on Solidly-Mounted Bidimensional Mode Resonators (S2MRs) exploiting a highly-optimized Sezawa mode in 30% Scandium-doped Aluminum Nitride (ScAlN) on Silicon Carbide (SiC) and operating near 16 GHz. Experimental results demonstrate mechanical quality factors (

${Q}_{m}$

) as high as 380, Bode quality factors (

${Q}_{\textit {Bode}}$

) approaching 500, electromechanical coupling coefficients (

${k}_{t}^{{2}}$

) of 4.5%, an overall Figure of Merit (

$\textit {FOM} = {Q}_{m} \cdot {k}_{t}^{{2}}$

) exceeding 17, and power handling greater than 20 dBm for devices closely matched to

$50~\Omega $

. To the best of the authors’ knowledge, S2MRs exhibit the highest Key Performance Indicators (KPIs) among solidly mounted resonators in the Ku-band, paving the way for the integration of nanoacoustic devices on fast substrates with high-power electronics, tailored for military and harsh-environment applications.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.