High-Performance Perovskite Photodetector With Multi-Peak Response Under Edge Illumination Configuration

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-02-13 DOI:10.1109/LED.2025.3541929

Sadeq Abbasi;Xiangyu Zhou;Feiyun Zhao;Aobo Ren;Kai Shen

{"title":"High-Performance Perovskite Photodetector With Multi-Peak Response Under Edge Illumination Configuration","authors":"Sadeq Abbasi;Xiangyu Zhou;Feiyun Zhao;Aobo Ren;Kai Shen","doi":"10.1109/LED.2025.3541929","DOIUrl":null,"url":null,"abstract":"In this letter, the operational characteristics and performance of perovskite photodetectors were systematically studied under edge illumination, revealing significant performance enhancements in a CsFAPbI3 perovskite device compared to vertical illumination. At 0 V bias, responsivity improved from 8.3 A/W to 214 A/W, and detectivity increased from <inline-formula> <tex-math>$1.67 \\times \\; 10^{{12}}$ </tex-math></inline-formula> to <inline-formula> <tex-math>$1.49 \\times \\; 10^{{13}}$ </tex-math></inline-formula> Jones compared to vertical illumination. The lateral light penetration resulted in distinct and repeatable multi-peak response patterns over a frequency range of 0.2-5 kHz and light intensities of 0.68-6.56 mW/cm2. The dynamic response of the device was effectively modeled as a second-order system, demonstrating its potential for secure communication applications. This setup also enabled precise control over the photodetector’s size at small dimensions by simply adjusting the thickness, achieving an active area of just <inline-formula> <tex-math>$10^{-{5}}$ </tex-math></inline-formula> cm2 under edge illumination. This study underscores the promise of edge illumination for optimizing perovskite photodetectors and is currently under further investigation to broaden its applicability.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"624-627"},"PeriodicalIF":4.1000,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10884869/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

In this letter, the operational characteristics and performance of perovskite photodetectors were systematically studied under edge illumination, revealing significant performance enhancements in a CsFAPbI3 perovskite device compared to vertical illumination. At 0 V bias, responsivity improved from 8.3 A/W to 214 A/W, and detectivity increased from

$1.67 \times \; 10^{{12}}$

$1.49 \times \; 10^{{13}}$

Jones compared to vertical illumination. The lateral light penetration resulted in distinct and repeatable multi-peak response patterns over a frequency range of 0.2-5 kHz and light intensities of 0.68-6.56 mW/cm2. The dynamic response of the device was effectively modeled as a second-order system, demonstrating its potential for secure communication applications. This setup also enabled precise control over the photodetector’s size at small dimensions by simply adjusting the thickness, achieving an active area of just

$10^{-{5}}$

cm2 under edge illumination. This study underscores the promise of edge illumination for optimizing perovskite photodetectors and is currently under further investigation to broaden its applicability.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.