Demonstration of 4H-SiC Charge Balance Floating Junction Barrier Schottky Diode With High Baliga Figure of Merit

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-28 DOI:10.1109/LED.2025.3535678

Jingyu Li;Qingwen Song;Hao Yuan;Fengyu Du;Haobo Kang;Tianyu Shu;Yu Zhou;Chao Han;Xiaoyan Tang;Yuming Zhang

引用次数: 0

Abstract

Lower specific on-resistance (Ron,sp) and higher breakdown voltage (BV) are the primary goals of silicon carbide (SiC) power devices. This letter establishes a multi-layer floating junction device model based on charge balance theory and presents an optimized 4H-SiC floating junction Schottky barrier diode (CB-FJJBS) verified through experiments. With the utilization of charge balance theory, the device achieves a more balanced electric field(EF) distribution, thereby enhancing its breakdown characteristics. Notably, the device exhibits a Baliga figure of merit (BFOM, i.e., 4V

${_{\text {B}}} {^{{2}}}$

/Ron,sp) of 12.1 GW/cm2, a Ron,sp of

${\mathrm {4.9~\text {m}\Omega }} \cdot $

cm2 and a BV of 3.85 kV, representing the best performance among reported SiC floating junction (FJ) devices.

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具有高Baliga品质系数的4H-SiC电荷平衡浮结势垒肖特基二极管的演示

较低的比导通电阻（Ron,sp）和较高的击穿电压（BV）是碳化硅（SiC）功率器件的主要目标。本文建立了基于电荷平衡理论的多层浮结器件模型，提出了一种优化的4H-SiC浮结肖特基势垒二极管（CB-FJJBS），并通过实验验证。利用电荷平衡理论，器件实现了更加平衡的电场分布，从而提高了器件的击穿特性。值得注意的是，该器件具有12.1 GW/cm2的Baliga优值（bbfm，即4V ${{\text {B}}} {^{{2}}}$ /Ron,sp）， ${\mathrm {4.9~\text {m}\Omega}} \cdot $ cm2)和3.85 kV的BV，代表了所报道的SiC浮结（FJ）器件中的最佳性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.