Enhanced wide band spectral photodetection (UV-NIR) and high detectivity investigated in topological p-TlBiSe2/n-ITO heterojunction

Abstract

Heterojunctions comprised of topological insulator material such as TlBiSe₂ have sparked intense study attention due to their diverse and unique characteristics and functionalities. The emergence of topological heterojunction can result in a p-n junction at the interfaces having a strong crucial potential barrier that enhances the photodetection capabilities of topological insulators. This study enlightens the successful fabrication and characterization of a novel heterojunction photodetector based on topological insulator p-TlBiSe₂/n-ITO, demonstrated remarkable photodetection abilities across a wide spectral range from ultraviolet (UV) to near-infrared (NIR). The unique topological properties of TlBiSe₂, combined with the excellent conductivity of ITO, contribute to enhanced responsivity and detectivity. Detailed analysis revealed high photodetection performance, with strong spectral responsivity, external quantum efficiency, and fast response time in detecting wavelengths ranging from 200 nm to 1000 nm, The high value of responsivity 1357 A/W and impressive detectivity value of $2.89\times {10}^{12}$ Jones makes this heterojunction highly suitable for applications requiring broad-spectrum detection. These findings highlight the potential of p-TlBiSe₂/n-ITO heterojunctions for next-generation photodetectors in UV and NIR applications, offering a promising platform for future optoelectronic devices.